ZXM62N03GTC datasheet, PDF - EEWORLD Datasheet

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ZXM62N03GTC: Description30V N-CHANNEL ENHANCEMENT MODE MOSFET; CategoryDiscrete semiconductor The transistor; File Size142KB，7 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZXM62N03GTC Overview

30V N-CHANNEL ENHANCEMENT MODE MOSFET

ZXM62N03GTC Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	SOT-223, 4 PIN
Reach Compliance Code	not_compliant
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	3.4 A
Maximum drain-source on-resistance	0.11 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

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ZXM62N03G

30V N-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY

(BR)DSS

= 30V: R

DS(on)

= 0.11 : I

= 4.7A

DESCRIPTION

This new generation of High Density MOSFETs from Zetex utilises a unique

structure that combines the benefits of low on-resistance with fast switching

speed. This makes them ideal for high efficiency, low voltage, power management

applications.

SOT223

FEATURES

Low on-resistance

Fast switching speed

Low threshold

Low gate drive

SOT223 package

APPLICATIONS

DC-DC Converters

Audio Output Stage

Relay and Soleniod driving

Motor Control

ORDERING INFORMATION

DEVICE

ZXM62N03GTA

ZXM62N03GTC

REEL

SIZE

7”

13”

TAPE

WIDTH

12mm

QUANTITY

PER REEL

1000 units

4000 units

Top View

DEVICE MARKING

ZXM6

2N03

ISSUE 1 - OCTOBER 2002

ZXM62N03GTC Related Products

	ZXM62N03GTC	ZXM62N03G	ZXM62N03GTA
Description	30V N-CHANNEL ENHANCEMENT MODE MOSFET	30V N-CHANNEL ENHANCEMENT MODE MOSFET	30V N-CHANNEL ENHANCEMENT MODE MOSFET
Is it Rohs certified?	conform to	-	conform to
Maker	Zetex Semiconductors	-	Zetex Semiconductors
package instruction	SOT-223, 4 PIN	-	SOT-223, 4 PIN
Reach Compliance Code	not_compliant	-	_compli
ECCN code	EAR99	-	EAR99
Shell connection	DRAIN	-	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	-	30 V
Maximum drain current (ID)	3.4 A	-	3.4 A
Maximum drain-source on-resistance	0.11 Ω	-	0.11 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4	-	R-PDSO-G4
JESD-609 code	e3	-	e3
Humidity sensitivity level	1	-	1
Number of components	1	-	1
Number of terminals	4	-	4
Operating mode	ENHANCEMENT MODE	-	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	-	260
Polarity/channel type	N-CHANNEL	-	N-CHANNEL
Certification status	Not Qualified	-	Not Qualified
surface mount	YES	-	YES
Terminal surface	Matte Tin (Sn)	-	Matte Tin (Sn)
Terminal form	GULL WING	-	GULL WING
Terminal location	DUAL	-	DUAL
Maximum time at peak reflow temperature	30	-	40
transistor applications	SWITCHING	-	SWITCHING
Transistor component materials	SILICON	-	SILICON

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