ZXM62N03G
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
= 30V: R
DS(on)
= 0.11 : I
D
= 4.7A
DESCRIPTION
This new generation of High Density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power management
applications.
SOT223
FEATURES
·
Low on-resistance
·
Fast switching speed
·
Low threshold
·
Low gate drive
·
SOT223 package
APPLICATIONS
·
DC-DC Converters
·
Audio Output Stage
·
Relay and Soleniod driving
·
Motor Control
ORDERING INFORMATION
DEVICE
ZXM62N03GTA
ZXM62N03GTC
REEL
SIZE
7”
13”
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
1000 units
4000 units
Top View
DEVICE MARKING
·
ZXM6
2N03
ISSUE 1 - OCTOBER 2002
1
ZXM62N03G
ABSOLUTE MAXIMUM RATING
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (V
GS
=10V; T
A
=25°C)(b)
(V
GS
=10V; T
A
=70°C)(b)
(V
GS
=10V; T
A
=25°C)(a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
DSS
V
GS
I
D
LIMIT
30
20
4.7
3.8
3.4
16
2.6
16
2.0
16
3.9
31
-55 to +150
UNIT
V
V
A
I
DM
I
S
I
SM
P
D
P
D
T
j
:T
stg
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R
θJA
R
θJA
VALUE
62.5
32
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
ISSUE 1 - OCTOBER 2002
2
ZXM62N03G
ISSUE 1 - OCTOBER 2002
3
ZXM62N03G
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
1.0
0.11
0.15
1.1
S
30
1
100
V
A
nA
V
I
D
=250µA, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
GS
= 20V, V
DS
=0V
I =250 A, V
DS
= V
GS
D
V
GS
=10V, I
D
=2.2A
V
GS
=4.5V, I
D
=1.1A
V
DS
=15V,I
D
=1.1A
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS.
Static Drain-Source On-State Resistance R
DS(on)
(1)
Forward Transconductance (1)(3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2)
(3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
V
SD
t
rr
Q
rr
18.8
11.4
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
2.9
5.6
11.7
6.4
C
iss
C
oss
C
rss
380
90
30
g
fs
pF
pF
pF
V
DS
=25V, V
GS
=0V,
f=1MHz
ns
ns
ns
ns
9.6
1.7
2.8
nC
nC
nC
V
DS
=24V,V
GS
=10V,
I
D
=2.2A
V
DD
=15V, I
D
=2.2A
R
G
=6.0
,
V
GS
=10V
0.95
V
ns
nC
T
J
=25 C, I
S
=2.2A,
V
GS
=0V
T
J
=25 C, I
F
=2.2A,
di/dt= 100A/ s
NOTES
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - OCTOBER 2002
4
ZXM62N03G
TYPICAL CHARACTERISTICS
100
+25°C
100
+150°C
10V 8V 7V 6V
I
D
- Drain Current (A)
I
D
- Drain Current (A)
VGS
5V
4.5V
4V
10V 8V 7V 6V
VGS
5V
4.5V
4V
3.5V
10
10
3.5V
1
3V
1
3V
0.1
0.1
1
10
100
0.1
0.1
1
10
100
V
DS
- Drain-Source Voltage (V)
V
DS
- Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
VDS=10V
Normalised R
DS(on)
and V
GS(th)
100
1.6
1.4
1.2
1.0
VGS=VDS
ID - Drain Current (A)
RDS(on)
10
VGS=10V
ID=2.2A
T=150°C
T=25°C
1
0.8
0.6
0.4
-100
ID=250uA
VGS(th)
0.1
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
-50
0
50
100
150
200
VGS - Gate-Source Voltage (V)
Tj - Junction Temperature (°C)
Typical Transfer Characteristics
Normalised R
DS(on)
and V
GS(th)
v Temperature
I
SD
- Reverse Drain Current (A)
100
R
DS(on)
- Drain-Source On-Resistance (
W
)
10
1
VGS=3V
VGS=4.5V
VGS=10V
10
0.1
1
T=150°C
T=25°C
0.01
0.1
1
10
100
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
- Drain Current (A)
V
SD
- Source-Drain Voltage (V)
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
ISSUE 1 - OCTOBER 2002
5
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