H5DU5182EFR datasheet, PDF - EEWORLD Datasheet

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H5DU5182EFR: Description512Mb DDR SDRAM; File Size518KB，30 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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512Mb DDR SDRAM

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512Mb DDR SDRAM

H5DU5182EFR

H5DU5162EFR

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 1.0 / Nov. 2009

H5DU5182EFR Related Products

	H5DU5182EFR	H5DU5162EFR	H5DU5162EFR-J3C	H5DU5162EFR-K3C	H5DU5162EFR-FAC	H5DU5162EFR-L2C	H5DU5182EFR-E3C	H5DU5182EFR-J3C	H5DU5182EFR-K2C	H5DU5182EFR-K3C
Description	512Mb DDR SDRAM	512Mb DDR SDRAM	512Mb DDR SDRAM	512Mb DDR SDRAM	512Mb DDR SDRAM	512Mb DDR SDRAM	512Mb DDR SDRAM	512Mb DDR SDRAM	512Mb DDR SDRAM	512Mb DDR SDRAM
Is it Rohs certified?	-	-	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Maker	-	-	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix
Parts packaging code	-	-	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA
package instruction	-	-	VBGA, BGA60,9X12,40/32	VBGA, BGA60,9X12,40/32	VBGA, BGA60,9X12,40/32	VBGA, BGA60,9X12,40/32	VBGA, BGA60,9X12,40/32	VBGA, BGA60,9X12,40/32	VBGA, BGA60,9X12,40/32	VBGA, BGA60,9X12,40/32
Contacts	-	-	60	60	60	60	60	60	60	60
Reach Compliance Code	-	-	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow
ECCN code	-	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	-	-	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	-	-	0.7 ns	0.75 ns	0.65 ns	0.75 ns	0.7 ns	0.7 ns	0.75 ns	0.75 ns
Other features	-	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	-	-	166 MHz	133 MHz	250 MHz	100 MHz	200 MHz	166 MHz	133 MHz	133 MHz
I/O type	-	-	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	-	-	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8
JESD-30 code	-	-	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60
JESD-609 code	-	-	e1	e1	e1	e1	e1	e1	e1	e1
length	-	-	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm
memory density	-	-	536870912 bi	536870912 bi	536870912 bi	536870912 bi	536870912 bi	536870912 bi	536870912 bi	536870912 bi
Memory IC Type	-	-	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	-	-	16	16	16	16	8	8	8	8
Number of functions	-	-	1	1	1	1	1	1	1	1
Number of ports	-	-	1	1	1	1	1	1	1	1
Number of terminals	-	-	60	60	60	60	60	60	60	60
word count	-	-	33554432 words	33554432 words	33554432 words	33554432 words	67108864 words	67108864 words	67108864 words	67108864 words
character code	-	-	32000000	32000000	32000000	32000000	64000000	64000000	64000000	64000000
Operating mode	-	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	-	-	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	-	-	32MX16	32MX16	32MX16	32MX16	64MX8	64MX8	64MX8	64MX8
Output characteristics	-	-	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	-	-	VBGA	VBGA	VBGA	VBGA	VBGA	VBGA	VBGA	VBGA
Encapsulate equivalent code	-	-	BGA60,9X12,40/32	BGA60,9X12,40/32	BGA60,9X12,40/32	BGA60,9X12,40/32	BGA60,9X12,40/32	BGA60,9X12,40/32	BGA60,9X12,40/32	BGA60,9X12,40/32
Package shape	-	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	-	GRID ARRAY, VERY THIN PROFILE	GRID ARRAY, VERY THIN PROFILE	GRID ARRAY, VERY THIN PROFILE	GRID ARRAY, VERY THIN PROFILE	GRID ARRAY, VERY THIN PROFILE	GRID ARRAY, VERY THIN PROFILE	GRID ARRAY, VERY THIN PROFILE	GRID ARRAY, VERY THIN PROFILE
Peak Reflow Temperature (Celsius)	-	-	260	260	260	260	260	260	260	260
power supply	-	-	2.5 V	2.5 V	2.5 V	2.5 V	2.6 V	2.5 V	2.5 V	2.5 V
Certification status	-	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	-	-	8192	8192	8192	8192	8192	8192	8192	8192
Maximum seat height	-	-	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm
self refresh	-	-	YES	YES	YES	YES	YES	YES	YES	YES
Continuous burst length	-	-	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8
Maximum standby current	-	-	0.005 A	0.005 A	0.005 A	-	0.005 A	0.005 A	0.005 A	0.005 A
Maximum slew rate	-	-	0.24 mA	0.24 mA	0.31 mA	-	0.26 mA	0.24 mA	0.24 mA	0.24 mA
Maximum supply voltage (Vsup)	-	-	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Minimum supply voltage (Vsup)	-	-	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
Nominal supply voltage (Vsup)	-	-	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	-	-	YES	YES	YES	YES	YES	YES	YES	YES
technology	-	-	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	-	-	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	-	-	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal form	-	-	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	-	-	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm
Terminal location	-	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	-	-	20	20	20	20	20	20	20	20
width	-	-	8 mm	8 mm	8 mm	8 mm	8 mm	8 mm	8 mm	8 mm

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