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BUZ50BSM

Description
6A, 1000V, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size63KB,1 Pages
ManufacturerSEMELAB
Environmental Compliance
Download Datasheet Parametric View All

BUZ50BSM Overview

6A, 1000V, N-CHANNEL, Si, POWER, MOSFET

BUZ50BSM Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSEMELAB
package instructionUNCASED CHIP, R-XUUC-N3
Reach Compliance Codeunknown
ConfigurationSINGLE
Minimum drain-source breakdown voltage1000 V
Maximum drain current (ID)6 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XUUC-N3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Transistor component materialsSILICON

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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