PSD
One-dimensional PSD
Plastic package
1-D PSD with plastic package
Hamamatsu offers a variety of 1-D PSDs (Position Sensitive Detectors) molded into plastic packages.
These PSDs feature excellent position detection resolution, high resistance to disturbance background light and high reliability.
Features
Applications
visible-cut package reducing background light noise
l
Surface mount package is available
l
Suitable for high-speed, microscopic spot light:
S7879, S8361
l
High sensitivity in the red region: S8361
l
High interelectrode resistance: S3271 to S3274-05
S7105-05, S5629-02
l
Excellent position detection resolution
l
High reliability
l
Thin, miniature plastic package
l
Clear package passing wide wavelength range or
l
Camera auto focus
l
Range finder
l
Optical proximity switch
l
Displacement meter
s
General ratings / Absolute maximum ratings
Type No.
Dimensional
outline
Active area
Resistance
length
(mm)
1
1.2
1.5
2
Absolute maximum ratings
Operating
Storage
Reverse voltage
temperature
temperature
V
R
Max.
Topr
Tstg
(V)
(°C)
(°C)
(mm)
S6407
1×1
➀
S6515
1 × 1.2
S4580-04
➁
0.8 × 1.5
S4580-06
S4581-04
➁
1×2
S4581-06
➂
S3271-05
S4582-04
➁
S4582-06
1 × 2.5
➂
S3272-05
S4583-04
➁
1×3
S4583-06
➂
S3273-05
1
S7879 *
➃
1×3
S8361 *
1,
*
2
S4584-04
➁
S4584-06
1 × 3.5
➂
S3274-05
S7105-04
➄
1 × 4.2
S7105-06
S7105-05
S5629
➅
1×6
S5629-01
S5629-02
*1: Works with microscopic spot light detection.
*2: High sensitivity in the red region type.
2.5
3
3
3.5
20
-25 to +85
-40 to +100
4.2
6
1
One-dimensional PSD
s
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Plastic package
Saturation
Terminal
Temp.
Position
photocurrent
Rise time *
5
Dark
Interelectrode
3
coefficient
capacitance
Photo
*
4
tr
current
resistance detection error *
of
Ct
sensitivity
Ist
V
R
=1 V
I
D
Rie
V
R
=1 V
I
D
V
R
=1 V
S
Type No.
Vb=0.1 V
R
L
=1 kΩ f=10 kHz
spot light size =φ300 µm V
R
=1 V V
R
=1 V
T
CID
R
L
=1 kΩ
Typ. Max.
λ=650
nm
λ=890
nm Min. Typ. Max. Typ.
λ=650
nm
λ=890
nm
Max.
(nA) (nA) (Times/° C) (µs) (µs) (pF)
(nm)
(nm) (A/W) (A/W) (kΩ) (kΩ) (kΩ) (µm)
(µm)
(µA)
S6407
160 200 240
25
760 to 1100 960
-
0.51
±5
±15
0.05 1
1.15
-
10
15
S6515
100 140 180
30
S4580-04 760 to 1100
-
-
960
0.51 100 140 180 ±10
±20
30
0.05 1
1.15
10
15
S4580-06 320 to 1100
0.35
3
S4581-04 760 to 1060
-
0.51
-
100 140 180
30
10
S4581-06 320 to 1060 920
0.38 0.53
3
±10
±20
0.05 1
1.15
15
S3271-05 760 to 1060
-
0.51 320 400 480
15
-
15
S4582-04 760 to 1100
-
-
100 140 180
30
10
S4582-06 320 to 1100 960
0.33 0.51
3
±10
±25
0.05 1
1.15
15
S3272-05 760 to 1100
-
320 400 480
15
-
15
S4583-04 760 to 1100
-
-
100 140 180
30
10
S4583-06 320 to 1100
0.33
3
±10
±30
15
960
0.51
S3273-05 760 to 1100
-
320 400 480
15
-
15
0.05 1
1.15
S7879
440 to 1100
0.36
70 110 150 ±15
±60
40
1
4
30
S8361
400 to 1100 680
0.45 0.45
S4584-04 760 to 1100
-
-
100 140 180
30
10
±15
±35
0.05 1
1.15
15
S4584-06 320 to 1100 960
0.33 0.51
3
S3274-05 760 to 1100
-
320 400 480
15
-
15
S7105-04 760 to 1100
-
0.51
-
100 140 180
30
5
±15
±40
0.1
2
1.15
40
S7105-06 320 to 1100 960
0.38 0.55
2
S7105-05 760 to 1100
-
0.51 320 400 480
15
-
10
S5629
760 to 1100
-
0.51
-
30 50 80
80
5
S5629-01 320 to 1100 960
0.38 0.55
±20
±60
0.1
2
1.15
2
60
S5629-02 760 to 1100
-
0.51 240 300 360
20
-
10
*3: In the range 75 % from the center of the active area to the edge.
*4: This indicates the upper limit of the photocurrent linearity over the entire incident light quantity and is defined as the
photocurrent at a point where the linearity deviates by 10 %.
*5: Time required for output change from 10 to 90 % of the steady output value when stepped function light is input to the PSD.
Peak
Spectral
response sensitivity
wavelength
range
λp
λ
s
Spectral response
0.6
(Typ. Ta=25 ˚C)
0.6
(Typ. Ta=25 ˚C)
S8361
S4581-06
PHOTO SENSITIVITY
(A/W)
PHOTO SENSITIVITY
(A/W)
S6407, S6515, S4580-04
S4582 to S4584-04,
0.5
S7105-04/-05, S5629/-02
S3272 to S3274-05
QE=100 %
0.4
0.5
QE=100 %
0.4
0.3
0.3
S7879
0.2
0.2
0.1
S4580-06
S4582 to S4584-06
S7105-06
S5629-01
400
600
800
1000
1200
S4581-04
S3271-05
0.1
0
200
0
200
400
600
800
1000
1200
WAVELENGTH
(nm)
KPSDB0079EB
WAVELENGTH
(nm)
KPSDB0080EB
2
One-dimensional PSD
s
Photo sensitivity temperature
characteristic (S4581-06)
+1.5
(Typ.)
Plastic package
s
Dark current vs. reverse voltage
1 nA
(Typ. Ta=25 ˚C)
S6407, S6515
S5629/-01/-02
S4580-04/-06
S4582 to S4584-04/-06
S7105-04/-05/-06
S3272 to S3274-05
s
Saturation photocurrent vs.
interelectrode resistance
1 mA
(Typ. Ta=25 ˚C)
TEMPERATURE COEFFICIENT
(%/˚C)
SATURATION PHOTOCURRENT
V
R
= 5 V
V
R
= 2 V
+1.0
DARK CURRENT
100 pA
100 µA
+0.5
V
R
= 1 V
S7879, S8361
10 pA
S4581-04/-06, S3271-05
10 µA
V
R
= 0 V
0
-0.5
200
400
600
800
1000
1200
1 pA
0.01
0.1
1
10
100
1 µA
10
100
1000
WAVELENGTH
(nm)
KPSDB0002EE
REVERSE VOLTAGE (V)
KPSDB0004EE
INTERELECTRODE RESISTANCE (kΩ)
KPSDB0003EA
s
Rise time vs. reverse voltage
3
(Typ. Ta=25 ˚C,
λ=650
nm)
10
(Typ. Ta=25 ˚C,
λ=890
nm)
8
RISE TIME (µs)
RISE TIME (µs)
2
6
S4583-06
4
S4583-06
1
2
S7879, S8361
S7879, S8361
0
0.1
0
0.1
1
10
100
1
10
100
REVERSE VOLTAGE (V)
KPSDB0095EA
REVERSE VOLTAEG (V)
KPSDB0096EB
s
Position detection characteristic example
(S4583-04, active area size: 1 × 3 mm)
RELATIVE PHOTOCURRENT OUTPUT
I
1
I
2
s
Definition of position detection error
When the electrical center of a PSD is assumed to be the
position of incident light where light current
I
1
equals
I
2
,
position detection error at each incident position can be
defined by the following equation.
I
2
-
I
1
Position detection error (µm) = Incident position
-
I
1
+
I
2
×
2
L
1.0
The electrical center is viewed as 0,
I
1
as (+), and
I
2
as (-).
0.5
OUTPUT
I
1
INCIDENT LIGHT
L (RESISTANCE LENGTH)
OUTPUT
I
2
0
-1.5
0
+1.5
POSITION ON PSD (mm)
KPSDC0001EA
POSITION DETECTION ERROR (µm)
+50
0
-50
-1.5
-1.0
-0.5
0
+0.5
+1.0
+1.5
POSITION ON PSD (mm)
KPSDB0005EB
3
One-dimensional PSD
Plastic package
s
Dimensional outlines [unit: mm, tolerance unless otherwise noted: ±0.1, chip position accuracy (without
➀)
with
respect to the package dimensions marked * X, Y
≤
±0.2,
θ ≤
±2°]
➀
S6407, S6515 (Surface mounting type)
6.0 ± 0.06
4.1 ± 0.2
(INCLUDING BURR)
+0.06
RESISTANCE LENGTH
ANODE 1
➁
S4580 to S4584-04/-06 (Surface mounting type)
4.1 ± 0.2
(INCLUDING BURR)
0.5
0.6
5.0 ± 0.2
(INCLUDING BURR)
5.0 ± 0.2
(INCLUDING BURR)
2.54
4.7 *
1.905 1.905
1.77
0.8
-0
1.77
4.7
10˚
10˚
1.5 ± 0.4
0.5
0.8
1.8
4.0 *
1.5 ± 0.4
0.5
0.8
1.5 ± 0.4
1.95 ± 0.4
4.0
1.5 ± 0.4
1.95 ± 0.4
7.0 ± 0.3
0.7 ± 0.3
10˚
0.25
1.8
0.7 ± 0.3
PHOTOSENSITIVE
SURFACE
ANODE 1
CATHODE (COMMON)
ANODE 2
CATHODE (COMMON)
7.9 ± 0.3
X=3.0 ± 0.1
7.0 ± 0.3
0.7 ± 0.3
10˚
0.7 ± 0.3
PHOTOSENSITIVE
SURFACE
θ ≤
±2˚
Y
≤
±0.1
5˚
REFERENCE
HOLE
5˚
0.1 ± 0.1
Chip position accuracy with respect to
center of reference hole
ANODE 1
CATHODE (COMMON)
NC
ANODE 2
CATHODE (COMMON)
CATHODE (COMMON)
KPSDA0057EA
KPSDA0022EA
➂
S3271 to S3274-05
0.6
0.5
➃
S7879, S8361
4.1 ± 0.2
(INCLUDING BURR)
0.6
0.5
5.0 ± 0.2
(INCLUDING BURR)
4.1 ± 0.2
(INCLUDING BURR)
5.0 ± 0.2
(INCLUDING BURR)
4.7 *
4.8 *
2.54
0.1 ± 0.1
0.25
4.7 *
5˚
R0.4
-0
+0.03
ANODE 2
REFERENCE
+0.06
HOLE 0.9
-0
5˚
4.8
4.8 *
10˚
5˚
10˚
4.0 *
(0.8)
4.9 ± 0.4
(1.25)(1.25)
4.0 *
13.8 ± 0.3
(0.8)
4.9 ± 0.4
5.2 ± 0.2
10˚
PHOTOSENSITIVE
SURFACE
0.5
0.8
0.3 MAX.
4.5 ± 0.4
0.3 MAX.
5˚
7.5˚ ± 5˚
KPSDA0063EA
0.25
5˚
1.8
0.25
ANODE 1
CATHODE (COMMON)
ANODE 2
CATHODE (COMMON)
10˚
PHOTOSENSITIVE
SURFACE
0.5
0.8
ANODE 1
CATHODE (COMMON)
ANODE 2
CATHODE (COMMON)
1.8
KPSDA0052EA
4
5˚
4.8 *
2.54
One-dimensional PSD
➄
S7105-04/-05/-06 (Surface mounting type)
4.6 ± 0.2
(INCLUDING BURR)
0.6
0.5
5.6 ± 0.2
(INCLUDING BURR)
5.4 *
Plastic package
➅
S5629/-01/-02 (Surface mounting type)
1.4 ± 0.3
0.35
2.54
5.5 *
0.45
5.4 ± 0.2
(INCLUDING BURR)
10˚
0.6 ± 0.3
0.89
0.1 ± 0.1
8.0 ± 0.3
5.2 *
15˚
1.5 ± 0.4
4.5 *
7.5 ± 0.3
1.5 ± 0.4
1.0
2.0
0.7 ± 0.3
5˚
0.25
0.7 ± 0.3
PHOTOSENSITIVE
SURFACE
ANODE 1
CATHODE (COMMON)
ANODE 2
CATHODE (COMMON)
0.1 ± 0.1
1.0
9.5 *
9.7 ± 0.2
(INCLUDING BURR)
1.4 ± 0.3
0.6 ± 0.3
0.2
0.5
0.8
3˚
15˚
PHOTOSENSITIVE
SURFACE
ANODE 1
CATHODE (COMMON)
ANODE 2
CATHODE (COMMON)
to
NC (SHORT LEAD)
to
NC (SHORT LEAD)
10˚
KPSDA0047EA
KPSDA0023EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
1.7
10˚
0.7
3˚
Cat. No. KPSD1009E06
Aug. 2004 DN
5
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