ECO-PAC
TM
3
Single Phase Half Controlled
Rectifier Bridge, B2HK
Preliminary Data Sheet
PSBH 54
I
dAV
=
56 A
V
RRM
= 800-1600 V
V
RSM
V
DSM
(V)
900
1300
1500
1700
V
RRM
V
DRM
(V)
800
1200
1400
1600
Type
+
~
~
-
PSBH 54/08
PSBH 54/12
PSBH 54/14
PSBH 54/16
ECO-PAC
TM
3
Symbol
I
dAV
I
TSM
Test Conditions
T
C
= 85 °C; per module
T
VJ
= 45 °C
V
R
= 0
V
R
= 0
T
VJ
= 45 °C
V
R
= 0
V
R
= 0
Maximum Ratings
56
550
600
490
540
1500
1490
1200
1210
150
A
A
A
A
A
A²s
A²s
A²s
A²s
A/µs
Features
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
(50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
(50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
= 125 °C t = 10 ms
∫
i
2
dt
•
•
•
•
•
•
Package with DCB ceramic base plate
Isolation voltage 3000 V
∼
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
UL Release applied
T
VJ
= 125 °C t = 10 ms
Applications
(di/dt)
cr
T
VJ
= 125 °C repetitive, I
T
= 50 A
f=50Hz, t
P
=200µs
V
D
=2/3V
DRM
I
G
=0.3 A
non repetitive,I
T
= 1/2 I
dAV
500
1000
≤
≤
10
5
0.5
10
-40... + 125
125
-40... + 125
A/µs
V/µs
W
W
W
V
°C
°C
°C
V
∼
V
∼
Nm
lb.in.
g
di
G
/dt=0.3A/µs
•
•
•
•
Supplies for DC power equipment
Imput rectifier for PWM inverter
Battery DC power supplies
Field supply for DC motors
(dv/dt)
cr
P
GM
P
GAVM
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
T
VJ
= 125 °C V
D
=2/3V
DRM
R
GK
=
∞,
method 1 (linear voltage rise)
T
VJ
= 125 °C t
P
=30µs
I
T
=I
TAVM
t
P
=300µs
Advantages
•
•
•
•
•
Easy to mount with four screws
Space and weight savings
Improved temperature and power
cycling capability
High power density
Small and light weight
50/60 Hz, RMS t = 1 min
I
ISOL
≤
1 mA
t=1s
Mounting torque (M4)
typ.
2500
3000
1.5 - 2.0
14 - 18
46
Weight
Data according to IEC 60747 refer to a single thyristor unless otherwise stated
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
ECO-PAC
TM
3
Symbol
I
D
, I
R
V
F
,V
T
V
TO
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
R
thJC
R
thJH
d
s
d
A
a
Test Conditions
I
T
= 80 A,
T
VJ
= 25 °C
Characteristic Value
≤
5
0.85
11
≤
≤
≤
≤
≤
≤
≤
≤
≤
1.5
1.6
100
200
0.2
5
450
200
2
250
0.8
0.2
1.1
0.183
11.2
11.2
50
mA
V
V
m
Ω
V
V
mA
mA
V
mA
mA
mA
µs
µs
K/W
K/W
K/W
K/W
mm
mm
m/s²
≤
1.64
T
VJ
= 125°C, V
R
= V
RRM
, V
D
=V
DRM
For power-loss calculations only
V
D
=6V
V
D
=6V
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
=-40°C
T
VJ
= 25°C
T
VJ
=-40°C
V
D
=2/3V
DRM
V
D
=2/3V
DRM
T
VJ
= 25°C, t
P
=10µs, V
D
=6V
I
G
=0.45A, di
G
/dt=0.45A/µs
T
VJ
= 25°C, V
D
=6V, R
GK
=
∞
T
VJ
= 25°C, V
D
=1/2V
DRM
I
G
=0.45A, di
G
/dt=0.45A/µs
T
VJ
= T
VJM
; I
T
=20A; t
p
=200µs;di/dt=-10A/µs
V
R
=100V; dv/dt=15V/µs; V
D
=2/3V
DRM
per thyristor; DC
per module
per thyristor; DC
per module
Creepage distance on surface
(Pin to heatsink)
Strike distance in air
(Pin to heatsink)
Max. allowable acceleration
Package style and outline
Dimensions in mm (1mm = 0.0394“)
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
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