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2SC4024

Description
10 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size23KB,1 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
Environmental Compliance
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2SC4024 Overview

10 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB

2SC4024 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-220AB
package instructionTO-220F, FM20, 3 PIN
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)10 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)300
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)35 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)24 MHz
Base Number Matches1
High h
FE
L
OW
V
CE
(sat)
Silicon NPN Epitaxial Planar Transistor
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
100
50
15
10
3
35(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
2SC4024
Application :
DC-DC Converter, Emergency Lighting Inverter and General Purpose
(Ta=25°C)
Ratings
10
max
10
max
50
min
300 to 1600
0.5
max
24
typ
150
typ
V
MHz
pF
13.0min
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=100V
V
EB
=15V
I
C
=25mA
V
CE
=4V, I
C
=1A
I
C
=5A, I
B
=0.1A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
Unit
µ
A
V
16.9
±0.3
8.4
±0.2
µ
A
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
20
R
L
(Ω)
4
I
C
(A)
5
I
B1
(A)
0.1
I
B2
(A)
–0.1
t
on
(
µ
s)
0.5typ
t
stg
(
µ
s)
2.0typ
t
f
(
µ
s)
0.5typ
2.54
3.9
B C E
I
C
– V
CE
Characteristics
(Typical)
C ol l e c t o r - E m i t te r S at u r a t i o n Vo lt a ge V
C E (s a t)
(V )
10
I
B
=35 mA
V
CE
( sat ) – I
B
Characteristics
(Typical)
1.5
I
C
– V
BE
Temperature Characteristics
(Typical)
10
( V
CE
= 4V )
C ol l e c t o r C ur r en t I
C
( A)
25m A
6
20m A
15mA
10mA
1.0
C o l l e c t o r Cu r r e n t I
C
( A)
8
30m A
8
6
mp
)
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Part No.
b. Lot No.
emp
se T
)
Ca
25˚C
5mA
125
2
5A
3A
I
C
= 1 A
2
0
0
2
4
6
0
0.002
0.01
0.1
Ba se Cu r r e nt I
B
( A)
1
2
0
0
–30˚
C
(Cas
˚C
(
10A
(Ca
0.5
e Te
4
se
4
mp)
Te
0.5
1.0
1.2
C o l l ect o r - Em i t t er V ol ta ge V
C E
(V )
Ba s e- E m i t t or V o l t a ge V
B E
( V )
(V
C E
= 4 V)
1000
D C C u r r e n t Ga i n h
FE
1000
D C C u r r e n t Ga i n h
FE
1 2 5 ˚C
( V
C E
= 4 V)
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
4
Typ
500
500
25˚C
–30
˚C
1
0.5
0.3
100
0.02
0.1
0. 5
1
5
10
100
0.02
0. 1
0. 5
1
5
10
1
10
Time t(ms)
100
1 00 0
C ol l e ct o r Cu rre nt I
C
(A)
C ol l ec t or C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
( V
C E
=1 2 V )
30
30
Safe Operating Area
(Single Pulse)
40
1m
s
Pc – T a Derating
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
30
10
Cu t-o ff F r e q u e n c y f
T
( M H
Z
)
10
C olle c to r C u r r e n t I
C
( A )
20
m
10
s
0m
s
5
DC
M ax im um P o w e r Di s s i p a ti o n P
C
( W )
Typ
W
ith
In
20
fin
ite
he
at
10
1
Without Heatsink
Natural Cooling
1 5 0x 15 0 x 2
10
1 0 0x 10 0 x 2
5 0x 50 x 2
2
0
Without Heatsink
0
25
50
75
si
nk
0.5
0
–0.05 –0.1
0.2
– 0. 5
–1
–5
–10
3
5
10
50
1 00
Em i t t er Cur ren t I
E
(A)
C ol l ec t or - Em i tt e r Vol t ag e V
C E
( V)
100
1 25
150
Am b i e n t T e m pe r a t u r e T a( ˚ C)
85
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