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BC856AL

Description
TRANSISTOR,BJT,PNP,65V V(BR)CEO,100MA I(C),SOT-23
CategoryDiscrete semiconductor    The transistor   
File Size84KB,1 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BC856AL Overview

TRANSISTOR,BJT,PNP,65V V(BR)CEO,100MA I(C),SOT-23

BC856AL Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)125
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.225 W
surface mountYES
Nominal transition frequency (fT)100 MHz

BC856AL Related Products

BC856AL BC857BL BC857CL BC858AL BC858BL
Description TRANSISTOR,BJT,PNP,65V V(BR)CEO,100MA I(C),SOT-23 TRANSISTOR,BJT,PNP,45V V(BR)CEO,100MA I(C),SOT-23 TRANSISTOR,BJT,PNP,45V V(BR)CEO,100MA I(C),SOT-23 TRANSISTOR,BJT,PNP,30V V(BR)CEO,100MA I(C),SOT-23 TRANSISTOR,BJT,PNP,30V V(BR)CEO,100MA I(C),SOT-23
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
Maker NXP NXP NXP NXP NXP
Reach Compliance Code unknown unknown unknown unknown unknown
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Configuration Single Single Single Single Single
Minimum DC current gain (hFE) 125 220 420 125 220
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.225 W 0.225 W 0.225 W 0.225 W 0.225 W
surface mount YES YES YES YES YES
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz

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