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HY27SF081G2A: Description1Gbit (128Mx8bit / 64Mx16bit) NAND Flash; File Size403KB，46 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HY27SF081G2A Overview

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

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HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

1Gb NAND FLASH

HY27SF081G2A

HY27SF161G2A

This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

use of circuits described. No patent licenses are implied.

Rev 0.3 / Nov. 2006

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

1. SUMMARY DESCRIPTION

The Hynix HY27SF(08/16)1G2A series is a 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc

Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided

into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.

The device contains 1024 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected

Flash cells.

A program operation allows to write the 2112-byte page in typical 200us and an erase operation can be performed in

typical 2ms on a 128K-byte(X8 device) block.

Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data

input/output as well as command input. This interface allows a reduced pin count and easy migration towards different

densities, without any rearrangement of footprint.

Commands, Data and Addresses are synchronously introduced using CE, WE, ALE and CLE input pin. The on-chip Pro-

gram/Erase Controller automates all program and erase functions including pulse repetition, where required, and inter-

nal verification and margining of data.

The modify operations can be locked using the WP input pin or using the extended lock block feature described later.

The output pin R/B (open drain buffer) signals the status of the device during each operation. In a system with multi-

ple memories the R/B pins can be connected all together to provide a global status signal.

Even the write-intensive systems can take advantage of the HY27SF(08/16)1G2A extended reliability of 100K program/

erase cycles by providing ECC (Error Correcting Code) with real time mapping-out algorithm.

The chip could be offered with the CE don’t care function. This function allows the direct download of the code from

the NAND Flash memory device by a microcontroller, since the CE transitions do not stop the read operation.

The copy back function allows the optimization of defective blocks management: when a page program operation fails

the data can be directly programmed in another page inside the same array section without the time consuming serial

data insertion phase.

The cache program feature allows the data insertion in the cache register while the data register is copied into the

flash array. This pipelined program operation improves the program throughput when long files are written inside the

memory. A cache read feature is also implemented. This feature allows to dramatically improve the read throughput

when consecutive pages have to be streamed out.

The HYNIX HY27SF(08/16)1G2A series is available in 48 - TSOP1 12 x 20 mm, 48 - USOP 12 x 17 mm, FBGA 9 x 11

mm.

1.1 Product List

PART NUMBER

HY27SF081G2A

HY27SF161G2A

ORIZATION

x16

VCC RANGE

1.7V - 1.95 Volt

PACKAGE

63FBGA / 48TSOP1 / 48USOP1

48TSOP1

Rev 0.3 / Nov. 2006

HY27SF081G2A Related Products

	HY27SF081G2A	HY27SF161G2A
Description	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

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