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MJE13007

Description
POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size84KB,4 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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MJE13007 Overview

POWER TRANSISTOR

MJE13007 Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeuniversal power supply
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN PLASTIC POWER TRANSISTORS
MJE13006
MJE13007
TO-220
Plastic Package
Switchmode Series NPN Silicon Power Transistors
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Sustaining Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
*Peak
Base Current Continuous
*Peak
Emitter Current Continuous
*Peak
Power Dissipation upto T
a=
25ºC
Derate above=25ºC
Power Dissipation upto T
c
=25ºC
Derate above=25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
V
CEO (sus)
V
CEV
V
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
P
D
P
D
T
j,
T
stg
MJE13006
300
600
9
8
16
4
8
12
24
2
16
80
640
- 65 to +150
MJE13007
400
700
UNIT
V
V
V
A
A
A
A
A
A
W
mW/ºC
W
mW/ºC
ºC
* Pulse Test: Pulse Width =5ms, Duty Cycle<10%
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
Maxmium Lead Temperature for
Soldering Purpose 1/8" from Case for 5
Seconds
R
th (j-c)
R
th (j-a)
T
L
1.56
62.5
275
ºC/W
ºC/W
ºC
ELECTRICAL CHARACTERISTICS (T
c
=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
**V
CEO(sus)
I
C
=10mA, I
B
=0
Collector Emitter sustaining voltage
MJE13006
MJE13007
I
CEV
V
CEV
=Rated Value,V
BE
=(off)=1.5V
Collector Cut Off Current
T
C
=100ºC
V
CEV
=Rated Value,V
BE
=(off)=1.5V
V
EB
=9V, I
C
=0
I
C
=2A, V
CE
=5V
I
C
=5A, V
CE
=5V
MIN
300
400
TYP
MAX
UNIT
V
V
mA
mA
mA
1.0
5.0
1.0
60
30
Emitter Cut Off Current
DC Current Gain
I
EBO
**h
FE
8
5
**Pulse Test: Pulse Width=300µs, Duty Cycle<2%
µ
Continental Device India Limited
Data Sheet
Page 1 of 4

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