Three Phase
Rectifier Bridges
Preliminary Data Sheet
V
RSM
V
800
1200
1400
1600
1800
V
RRM
V
800
1200
1400
1600
1800
Type
PSD 112/08
PSD 112/12
PSD 112/14
PSD 112/16
PSD 112/18
PSD 112
I
dAVM
V
RRM
= 127 A
= 800-1800 V
~
~
~
Symbol
I
dAVM
I
FSM
Test Conditions
T
C
= 90°C, module
T
VJ
= 45°C
t = 10 ms (50 Hz), sine
V
R
= 0
t = 8.3 ms (60 Hz), sine
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
127
1200
1300
1000
1100
7200
7200
5000
5000
-40 ... + 150
150
-40 ... + 125
A
A
A
A
A
A
2
s
A
2
s
A s
A
2
s
°C
°C
°C
V
∼
V
∼
Nm
Nm
g
2
∫
i
2
dt
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
Features
•
Package with screw terminals
•
Isolation voltage 3000 V∼
•
Planar glasspassivated chips
•
Blocking voltage up to 1800 V
•
Low forward voltage drop
•
UL registered, E148688
Applications
•
S
upplies for DC power equipment
•
I
nput rectifiers for PWM inverter
•
B
attery DC power supplies
•
F
ield supply for DC motors
Advantages
•
Easy to mount with two screws
•
Space and weight savings
•
Improved temperature and power
cycling capability
Package, style and outline
Dimensions in mm (1mm = 0.0394“)
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
50/60 HZ, RMS
I
ISOL
≤
1 mA
t = 1 min
t=1s
(M6)
(M6)
2500
3000
5
5
270
Mounting torque
Terminal connection torque
typ.
Symbol
I
R
V
F
V
TO
r
T
R
thJC
R
thJK
d
S
d
A
a
Test Conditions
V
R
= V
RRM
V
R
= V
RRM
T
VJ
= 25°C
T
VJ
= T
VJM
Characteristic Value
≤
≤
≤
0.3
5.0
1.7
0.8
4
0.9
0.15
1.08
0.18
10.0
9.4
50
mA
mA
V
V
mΩ
K/W
K/W
K/W
K/W
mm
mm
m/s
2
I
F
= 300 A
T
VJ
= 25°C
For power-loss calculations only
T
VJ
= T
VJM
per diode; DC current
per module
per diode; DC current
per module
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
PSD 112
300
[A]
250
1.6
1.4
1.2
IF(OV)
------
IFSM
10
IFSM (A)
TVJ=45°C
900
TVJ=150°C
780
4
2
As
200
150
TVJ=45°C
1
100
T
VJ
= 150°C
50
IF
0
0.5
1.0
0 VRRM
TVJ=150°C
0.8
1/2 VRRM
T
VJ
= 25°C
1.5
VF [V]
2.0
0.6
0.4
10
0
10
1 VRRM
10
1
t[ms] 10
2
10
3
3
1
2
4
t [ms]
6
10
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode I
FSM
: Crest value.
t: duration
TC
90
95
100
105
85
Fig. 3
∫i
2
dt versus time
(1-10ms) per diode
400
[W]
350
300
250
200
150
100
50
PVTOT
0
PSD 112
130
[A]
110
DC
sin.180°
rec.120°
rec.60°
rec.30°
0.15 0.09
0.22
= RTHCA [K/W]
0.34
110
115
120
90
0.59
125
130
DC
sin.180°
rec.120°
rec.60°
rec.30°
IFAVM
50
0
100
[A]
50
1.34
135
140
°C
Tamb
50
100
[K]
150
145
150
I dAV
0
50
100
T C (°C)
150
200
Fig. 4 Power dissipation versus direct output current and ambient
temperature
K/W
Fig.5 Maximum forward current
at case temperature
1.2
1
0.8
0.6
0.4
0.2
Zth
ZthJK
Z thJC
0.01
0.1
t[s]
1
10
Fig. 6 Transient thermal impedance per diode
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
Electronics Design Contest
京公网安备 11010802033920号
EEWORLD
