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BZW06-13B

Description
Trans Voltage Suppressor Diode, 12.8V V(RWM), Bidirectional
CategoryDiscrete semiconductor    diode   
File Size116KB,3 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
Download Datasheet Parametric View All

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BZW06-13B Overview

Trans Voltage Suppressor Diode, 12.8V V(RWM), Bidirectional

BZW06-13B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum clamping voltage21.2 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
polarityBIDIRECTIONAL
Maximum repetitive peak reverse voltage12.8 V
surface mountNO
BL
FEATURES
GALAXY ELECTRICAL
BZW06 --- SERIES
BREAKDOWN VOLTAGE: 5.8 --- 376 V
PEAK PULSE POWER: 600 W
TRANSIENT VOLTAGE SUPPRESSOR
Plastic package
has
Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated junction
600W
peak pulse power capability with a 10/1000µs
waveform, repetition rate (duty cycle): 0.01%
Excellent clamping capability
Fast response time: typically less than 1.0ps from 0 Volts to
V
(BR)
for uni-directional and 5.0ns for bi-directional types
Devices with V
(BR)
10V I
D
are typically I
D
less than 1.0 µA
High temperature soldering guaranteed:265
/ 10 seconds,
0.375"(9.5mm) lead length, 5Ibs. (2.3kg) tension
DO -
15
MECHANICAL DATA
Case:JEDEC DO--15, molded plastic body over
passivated junction
Terminals: Axial leads, solderable per MIL-STD-750,
method 2026
Polarity: Foruni-directional types the color band denotes
the cathode, which is postitive with respect to the
anode under normal TVS operation
Weight: 0.014 ounces, 0.39 grams
Mounting position: Any
DEVICES FOR BIDIRECTIONAL APPLICATIONS
For bi-directional use add suffix letter "B" (e.g. BZW06P-6V4B).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
SYMBOL
Peak pow er sissipation w ith a 10/1000µs w aveform (NOTE 1, FIG.1)
Peak pulse current w ith a 10/1000µs w aveform (NOTE 1)
Steady state pow er dissipation at T
L
=75
fffffLead
lengths 0.375"(9.5mm) (NOTE 2)
Peak forw ard surge current, 8.3ms single half
ffffSine-w
ave superimposed on rated load (JEDEC Method)
Thermal resistance junction to lead
junction to ambient lead = 10mm
Operating junction and storage temperature range
VALUE
Minimum 600
SEE TABLE 1
3.0
100.0
60
100
-55---+175
UNIT
W
A
W
A
P
PPM
I
PPM
P
M(AV)
I
FSM
R
θJL
R
θJA
T
J
, T
STG
/W
NOTES: (1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25°C per Fig. 2
Rating is 500W betw een 40V and 188V types. For a surge greater than the maximum values, the diode w ill short circuit.
(2) Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5
www.galaxycn.com
Document Number 0285008
BL
GALAXY ELECTRICAL
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