Power Field-Effect Transistor, 4A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN
| Parameter Name | Attribute value |
| Maker | Infineon |
| Parts packaging code | TO-220AB |
| package instruction | IN-LINE, R-PSIP-T3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| Avalanche Energy Efficiency Rating (Eas) | 410 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 800 V |
| Maximum drain current (ID) | 4 A |
| Maximum drain-source on-resistance | 2.5 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSIP-T3 |
| JESD-609 code | e3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 16 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | MATTE TIN |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| BUZ81-E3046 | BUZ81-E3044 | BUZ81-E3045 | |
|---|---|---|---|
| Description | Power Field-Effect Transistor, 4A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN | Power Field-Effect Transistor, 4A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 4 PIN | Power Field-Effect Transistor, 4A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN |
| Maker | Infineon | Infineon | Infineon |
| Parts packaging code | TO-220AB | TO-220AB | TO-220AB |
| package instruction | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G3 | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown |
| Avalanche Energy Efficiency Rating (Eas) | 410 mJ | 410 mJ | 410 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 800 V | 800 V | 800 V |
| Maximum drain current (ID) | 4 A | 4 A | 4 A |
| Maximum drain-source on-resistance | 2.5 Ω | 2.5 Ω | 2.5 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSIP-T3 | R-PSSO-G3 | R-PSSO-G2 |
| JESD-609 code | e3 | e3 | e3 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 16 A | 16 A | 16 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | YES | YES |
| Terminal surface | MATTE TIN | MATTE TIN | MATTE TIN |
| Terminal form | THROUGH-HOLE | GULL WING | GULL WING |
| Terminal location | SINGLE | SINGLE | SINGLE |
| transistor applications | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON |
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