BUZ81-E3045 datasheet, PDF - EEWORLD Datasheet

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BUZ81-E3045: DescriptionPower Field-Effect Transistor, 4A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size156KB，7 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BUZ81-E3045 Overview

Power Field-Effect Transistor, 4A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

BUZ81-E3045 Parametric

Parameter Name	Attribute value
Maker	Infineon
Parts packaging code	TO-220AB
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	unknown
Avalanche Energy Efficiency Rating (Eas)	410 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	800 V
Maximum drain current (ID)	4 A
Maximum drain-source on-resistance	2.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	16 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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BUZ81-E3045 Related Products

	BUZ81-E3045	BUZ81-E3044	BUZ81-E3046
Description	Power Field-Effect Transistor, 4A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN	Power Field-Effect Transistor, 4A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 4 PIN	Power Field-Effect Transistor, 4A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN
Maker	Infineon	Infineon	Infineon
Parts packaging code	TO-220AB	TO-220AB	TO-220AB
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G3	IN-LINE, R-PSIP-T3
Contacts	3	3	3
Reach Compliance Code	unknown	unknown	unknown
Avalanche Energy Efficiency Rating (Eas)	410 mJ	410 mJ	410 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	800 V	800 V	800 V
Maximum drain current (ID)	4 A	4 A	4 A
Maximum drain-source on-resistance	2.5 Ω	2.5 Ω	2.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSSO-G3	R-PSIP-T3
JESD-609 code	e3	e3	e3
Number of components	1	1	1
Number of terminals	2	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	IN-LINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	16 A	16 A	16 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	NO
Terminal surface	MATTE TIN	MATTE TIN	MATTE TIN
Terminal form	GULL WING	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON

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