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PCFMB200E6

Description
IGBT Module-Chopper
CategoryDiscrete semiconductor    The transistor   
File Size241KB,4 Pages
ManufacturerNihon Inter Electronics Corporation
Websitehttp://www.niec.co.jp
Download Datasheet Parametric View All

PCFMB200E6 Overview

IGBT Module-Chopper

PCFMB200E6 Parametric

Parameter NameAttribute value
MakerNihon Inter Electronics Corporation
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X5
Contacts5
Reach Compliance Codeunknow
Shell connectionISOLATED
Maximum collector current (IC)200 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
JESD-30 codeR-XUFM-X5
Number of components1
Number of terminals5
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)350 ns
Nominal on time (ton)250 ns
IGBT
M½½½½½-C½½½½½½
□ 回 路 図 :
CIRCUIT
200A,
600V
□ 外 ½ 寸 法 図 :
OUTLINE DRAWING
94.0
80
±0.25
PCFMB200E6
12.0 11.0 12.0 11.0 12.0
(C2E1)
1
(E2)
2
(C1)
3
48.0
16.0
14.0
2-Ø6.5
1
2
3
5(E1)
4(G1)
3-M5
23.0
23.0
17.0
5
4
14
9
14
9
14
4-fasten tab
#110 t=0.5
21.2 7.5
7
30
- 0 .5
+1.0
LABEL
4
Dimension:[mm½
□ 最 大 定 格 :
MAXIMUM
コレクタ・エミッタ間電圧
Collector-Emitter Voltage
ゲ ー ト・エ ミ ッ タ 間 電 圧
Gate-Emitter Voltage
コ レ ク タ 電 流
Collector Current
コ レ ク タ 損 失
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
圧(Terminal to Base AC,1½inute)
Isolation Voltage
Module Base to Heatsink
締 め 付 け ト ル ク
Mounting Torque
Busbar to Main Terminal
□ 電 気 的 特 性
DC
1½½
RATINGS
(T
=25℃)
S½½½½½
CES
GES
CP
½
½½½
ISO
½½½
R½½½½ V½½½½
600
±20
200
400
780
-40½+150
-40½+125
2,500
3 3 .6
( 0 )
2 2 .4
( 0 )
U½½½
(RMS)
N・½
(kgf½cm)
I½½½
ELECTRICAL CHARACTERISTICS
(T
=25℃)
S½½½½½
CES
GES
CE(½½½)
GE(½½)
½½½
上 昇 時 間
ターンオン時間
下 降 時 間
ターンオフ時間
Rise
Turn-on
Fall
Turn-off
Time
Time
Time
Time
½
½
½
½½
½
½
½
½½½
T½½½ C½½½½½½½½
CE
= 600V, V
GE
= 0V
GE
= ±20V,V
CE
= 0V
= 200A,V
GE
= 15V
CE
= 5V,I
= 200mA
CE
= 10V,V
GE
= 0V,½= 1MH
CC
=
=
=
GE
=
300V
1.5Ω
3.6Ω
±15V
M½½.
4.0
T½½.
2.1
10,000
0.15
0.25
0.10
0.35
M½½.
1.0
1.0
2.6
8.0
0.30
0.40
0.35
0.70
U½½½
½A
μA
½F
C½½½½½½½½½½½½½
コ レ ク タ 遮 断 電 流
Collector-Emitter Cut-Off Current
ゲ ー ト 漏 れ 電 流
Gate-Emitter Leakage Current
コレクタ・エミッタ間½和電圧
Collector-Emitter Saturation Voltage
ゲ ー ト し き い 値 電 圧
Gate-Emitter Threshold Voltage
Input Capacitance
スイッチング時間
Switching Time
μ½
□フリーホイーリングダイオードの 特 性:
FREE
I½½½
Forward Current
C½½½½½½½½½½½½½
Peak Forward Voltage
逆 回 復 時 間
Reverse Recovery Time
WHEELING DIODE RATINGS & CHARACTERISTICS
(T
=25℃)
S½½½½½
FM
S½½½½½
½
½½
R½½½½ V½½½½
200
400
T½½½ C½½½½½½½½
= 200A,V
GE
= 0V
= 200A,V
GE
= -10V
½i/½t= 400A/μs
M½½.
T½½.
1.9
0.15
M½½.
2.4
0.25
U½½½
DC
1½½
U½½½
μ½
□ 熱 的 特 性 :
THERMAL CHARACTERISTICS
C½½½½½½½½½½½½½
IGBT
Thermal Impedance
Diode
S½½½½½
Rth(j-c)
T½½½ C½½½½½½½½
Junction to Case
(Tc測定点チップ直下)
M½½.
T½½.
M½½.
0.16
0.38
U½½½
℃/W
00
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