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PSEI2x101

Description
Fast Recovery Epitaxial Diode (FRED)
File Size97KB,2 Pages
ManufacturerPowersem GmbH
Websitehttps://www.powersem.net/index.php
Download Datasheet View All

PSEI2x101 Overview

Fast Recovery Epitaxial Diode (FRED)

ECO-PAC
TM
2
Fast Recovery
Epitaxial Diode (FRED)
PSEI 2x101
I
FAVM
= 2x 96 A
V
RRM
t
rr
= 600 V
= 35 ns
Preliminary Data Sheet
V
RSM
V
RRM
Type
(V)
(V)
600 600 PSEI 2x101/06
AC-1
IK-10
LN -9
VX-18
Symbol
I
FRMS
I
FAVM
*
I
FRM
I
FSM
Test Conditions
T
VJ
= T
VJM
T
C
= 70 °C, rectangular, d=0.5
T
VJ
= 45 °C
V
R
= 0
V
R
= 0
T
VJ
= 45 °C
V
R
= 0
V
R
= 0
Maximum Ratings
150
96
1200
1300
1080
1170
7200
7100
5800
5700
A
A
A
A
A
A
A
A²s
A²s
A²s
A²s
°C
°C
°C
V
V
Nm
lb.in.
g
Features
t
P
<10µs;
rep.rating, pulse widthlimited by
T
VJM
TBD
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
= 125 °C t = 10 ms (50 Hz), sine
2 independent FRED in 1 package
Isolation voltage 3000 V
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
Very short recovery time
Soft recovery behaviour
UL registered, E 148688
i
2
dt
T
VJ
= 125 °C t = 10 ms (50 Hz), sine
Applications
T
VJ
T
VJM
T
stg
V
ISOL
M
d
-40... + 150
150
-40... + 150
50/60 Hz, RMS t = 1 min
I
ISOL
1 mA
t=1s
(M4)
Mounting torque
typ.
2500
3000
1.5 - 2.0
14 - 18
24
Weight
Symbol
I
R
Test Conditions
T
VJ
= 25°C, V
R
=V
RRM
T
VJ
= 25°C, V
R
=0.8
.
V
RRM
T
VJ
= 125°C, V
R
=0.8
.
V
RRM
I
F
= 100 A,
T
VJ
= 25 °C
Characteristic Value
max.
max.
max.
max.
3
1
20
1.25
0.7
4.7
0.5
0.05
typ.
typ.
19
35
11.2
11.2
50
mA
mA
mA
V
V
m
K/W
K/W
A
ns
mm
mm
m/s²
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
V
F
V
TO
r
T
R
thJC
R
thCH
I
RM
t
rr
d
s
d
A
a
For power-loss calculations only
per diode; max.
per diode; typ.
I
F
=80A; -di
F
/dt=200A/µs; V
R
=100V
L≤0.05 mH; T
VJ
= 100°C
I
F
=1A; -di
F
/dt=400A/µs; V
R
=30V;
T
VJ
= 25°C
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
Low noise switching
Small and light weight
Data according to IEC 60747 refer to a single diode
unless otherwise stated
*I
FAVM
rating includes blocking losses at T
VJM
;
V
R
=0.8 V
RRM
; duty cycle d=0.5
2001 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
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