Diode Modules
Preliminary Data Sheet
PSKD 312
I
FRMS
I
FAVM
V
RRM
2
= 2x 520 A
= 2x 310 A
= 1200-2200 V
3
2
V
RSM
V
1300
1500
1700
1900
2100
2300
V
RRM
V
1200
1400
1600
1800
2000
2200
Type
PSKD 312/12
PSKD 312/14
PSKD 312/16
PSKD 312/18
PSKD 312/20
PSKD 312/22
3
1
1
Symbol
I
FRMS
I
FAVM
I
FSM
Test Conditions
T
VJ
= T
VJM
T
C
= 100°C; 180° sine
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
Maximum Ratings
520
310
10500
11200
9200
9800
551000
527000
423 000
403 000
-40...+150
150
-40...+125
A
A
A
A
A
A
As
A
2
s
2
Features
Direct copper bonded Al
2
O
3
-ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 148688
●
●
●
●
∫
i dt
2
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
A
2
s
A
2
s
°C
°C
°C
V~
V~
Applications
Supplies for DC power equipment
DC supply for PWM inverter
Field supply for DC motors
Battery DC power supplies
●
●
●
●
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
Symbol
I
RRM
V
F
V
T0
r
T
R
thJC
R
thJK
Q
S
I
RM
d
S
d
A
a
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t=1s
3000
3600
Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
●
●
●
●
Mounting torque (M6)
Terminal connection torque (M8)
Typical including screws
Test Conditions
T
VJ
= T
VJM
; V
R
= V
RRM
I
F
= 600 A; T
VJ
= 25°C
For power-loss calculations only
T
VJ
= T
VJM
per
per
per
per
diode; DC current
module
diode; DC current
module
4.5-7/40-62 Nm/lb.in.
11-13/97-115 Nm/lb.in.
750
g
Characteristic Values
30
mA
1.32
0.8
0.6
0.12
0.06
0.16
0.08
700
260
12.7
9.6
50
V
V
m
Ω
K/W
K/W
K/W
K/W
µC
A
mm
mm
m/s
2
Dimensions in mm (1 mm = 0.0394")
M8x20
T
VJ
= 125°C; I
F
= 400 A; -di/dt = 50 A/µs
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
10000
10
6
I
2
t
I
FSM
V
R
= 0V
I
FAVM
A
550
A
500
450
400
350
8000
50 Hz
80 % V
RRM
T
VJ
= 45°C
T
VJ
= 150°C
A
2
s
DC
180° sin
120°
60°
30°
6000
T
VJ
= 45°C
4000
300
T
VJ
= 150°C
250
200
150
2000
100
50
0
0.001
0.01
0.1
s
t
1
10
5
1
t
ms
10
0
0
25
50
75
100
T
C
125 °C 150
Fig. 1 Surge overload current
I
FSM
: Crest value, t: duration
600
P
tot
W
500
Fig. 2 I
2
t versus time (1-10 ms)
Fig. 3 Maximum forward current
at case temperature
Fig. 4 Power dissipation versus
forward current and ambient
temperature (per diode)
R
thKA
K/W
400
0.06
0.1
0.2
0.3
0.4
0.6
0.8
DC
180° sin
120°
60°
30°
300
200
100
0
0
100
200
300
400
500 A 0
I
FAVM
25
50
75
100
125
°C
T
A
150
1750
P
tot
W
1500
R
1250
1000
750
500
250
0
L
R
thKA
K/W
0.04
0.06
0.08
0.12
0.2
0.3
0.5
Fig. 5 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
Circuit
Circuit
B2
B2U
U
2 x PSKD 312
2 x MDD312
0
100
200
300
400
500
600 A 0
I
dAVM
25
50
75
100
°C
125
T
A
150
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
3000
W
2500
P
tot
2000
R
thKA
K/W
1500
Circuit
Circuit
B6U
B6U
3 x
PSKD 312
3 x
MDD312
0.03
0.06
0.1
0.15
0.2
0.3
0.4
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
1000
500
0
0
200
400
600
800 A
I
dAVM
0
25
50
75
100
125 °C 150
T
A
0.20
K/W
0.15
Z
thJC
Fig. 7 Transient thermal impedance
junction to case (per diode)
R
thJC
for various conduction angles d:
d
R
thJC
(K/W)
0.120
0.128
0.135
0.153
0.185
DC
180°C
120°C
60°C
30°C
0.10
30°
60°
120°
180°
DC
0.05
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
0.0058
0.031
0.072
0.0112
t
i
(s)
0.00054
0.098
0.54
12
1
2
3
4
0.00
10
-3
10
-2
10
-1
10
0
10
1
t
s
10
2
0.25
K/W
0.20
Z
thJK
0.15
Fig. 9 Transient thermal impedance
junction to heatsink (per diode)
R
thJK
for various conduction angles d:
d
DC
180°C
120°C
60°C
30°C
R
thJK
(K/W)
0.160
0.168
0.175
0.193
0.225
0.10
0.05
30°
60°
120°
180°
DC
Constants for Z
thJK
calculation:
i
R
thi
(K/W)
0.0058
0.031
0.072
0.0112
0.04
t
i
(s)
0.00054
0.098
0.54
12
12
1
2
3
4
5
0.00
10
-3
10
-2
10
-1
10
0
10
1
t
s
10
2
POWERSEM GmbH, Walpersdorfer Str. 53
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
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