ECO-PAC
TM
1
Powerline N-Channel
Trench Gate-
IGBT Module
PSTG 50HST12
V
CES
V
CE(sat)
I
C25
I
C75
I
CM
t
SC
I
N
H
M
Preliminary Data Sheet
= 1200 V
= 1.9 V
= 72 A
= 50 A
= 150 A
= 10 µs
A
B
G
Symbol
V
CES
V
GES
I
C25
I
C75
I
CM
P
tot
t
SC
T
VJ
T
stg
R
thJC
R
thJC
V
ISOL
M
D
d
S
d
A
Weight
Test Conditions
T
VJ
= 25°C to 150°C
continous
T
C
= 25°C;
T
C
= 75°C;
T
C
= 75°C;
T
C
= 75°C
V
CE
= 80 V
CES
, R
G
= 10
Ω,
V
GE
=
±15
V
T
VJ
= 125°C, non-repetitive
Maximum Ratings
1200
±20
72
50
150
90
10
-40...+150
-40...+125
V
V
A
A
A
W
µs
°C
°C
K/W
K/W
V~
Nm
mm
mm
g
Features
•
Package with DCB ceramic base
plate and soldering pins for PCB
mounting
•
Isolation voltage over 3000 V∼
•
Trench Gate
•
Enhancement Mode N-Channel
Device
•
Non Punch through Structure
•
High Switching Speed
•
Low On-state Saturation Voltage
•
High Input Impedance Simplifies
Gate Drive
•
Latch-Free Operation
•
Fully Short Circuit Rated to 10 µs
•
Wide RBSOA
Applications
•
High Frequency Inverters
•
Motor Control
•
Switch Mode Power Supplies
•
High Frequency Welding
•
UPS Systems
•
PWM Drives
IGBT-per devices
Diode-per devices
I
ISOL
≤
1 mA, 50/60 Hz, t= 1 min. 180° sine
Mounting torque (M4)
typ.
Creepage distance on surface
Strike distance through air
typ.
16
0.83
2.0
3000
1.5-1.8
min.
11.2
4.0
Caution: These devices are sensitive to electrostatic discharge. Users should observe proper ESD handling
precautions.
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
PSTG 50HST12
Symbol
I
CES
I
GES
V
CE(sat)
V
GE(th)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oes
C
ies
V
FM
t
rr
I
RRM
NTC
Test Conditions
V
CE
= V
CES
, V
GE
= 0 V,
T
VJ
= 25°C
T
VJ
= 125°C
Characteristic Value
typ.
max.
0.4
2
1
2.3
mA
mA
µA
V
V
V
ns
ns
ns
ns
mJ
mJ
pF
pF
pF
1.9
1.92
90
12
470
V
V
ns
A
kΩ
V
CE
= 0 V, V
GE
=
±20
V
I
C
= 50A, V
GE
= 15 V
T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 50A, V
GE
= V
CE
Inductive load, T
VJ
= 125°C
V
CE
= 50% V
CEs
, I
C
= 25 A
R
G
= 5
Ω,
V
GE
=
±15
V
1.9
2.1
7
170
17
340
60
4
7
8000
340
50
V
CE
= 75 V, V
GE
= 15 V, f= 1 MHz
V
CE
= 75 V, V
GE
= 15 V, f= 1 MHz
V
CE
= 75 V, V
GE
= 15 V, f= 1 MHz
I
F
= 25 A,
T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 25 A, di
RR
/ dt = 200 A/µs,
V
R
= 50% V
RRM
25°C
Package style and outline
Dimensions in mm (1mm = 0.0394“)
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
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