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PHMB200BS12

Description
IGBT 200 A 1200 V
File Size265KB,3 Pages
ManufacturerNihon Inter Electronics Corporation
Websitehttp://www.niec.co.jp
Download Datasheet View All

PHMB200BS12 Overview

IGBT 200 A 1200 V

IGBT
■回路図 CIRCUIT
200 A 1200 V
PHMB200BS12
(単½ Dimension:mm)
■外½寸法図 OUTLINE DRAWING
■最大定格 Maximum Ratings(T
C
=25℃)
項   目
Item
コレクタ・エミッタ間電圧
Collector-Emitter Voltage
ゲート・エミッタ間電圧
Gate-Emitter Voltage
コレクタ電流
Collector Current
DC
1ms
記号
Symbol
V
CES
V
GES
I
C
I
CP
P
C
T
j
T
stg
V
iso
定 格 値
Rated Value
1200
±20
200
400
1200
−40∼+150
−40∼+125
2500
3(30.6)
F
tor
M4
M6
1.4(14.3)
3(30.6)
N m
(kgf cm)
単½
Unit
V
V
A
W
V
(RMS)
コレクタ損失
Collector Power Dissipation
接合温度
Junction Temperature Range
保存温度
Storage Temperature Range
絶縁耐圧
(端子−ベース間,AC1分間)
Isolation Voltage Terminal to Base, AC1min.)
ベース取付部
Module Base to Heatsink
締付トルク
Mounting Torque 端子部
Busbar to Terminal
■電気的特性 Electrical Characteristics(T
C
=25℃)
項   目
Characteristic
コレクタ遮断電流
Collector-Emitter Cut-Off Current
ゲート漏れ電流
Gate-Emitter Leakage Current
コレクタ・エミッタ間½和電圧
Collector-Emitter Saturation Voltage
ゲートしきい値電圧
Gate-Emitter Threshold Voltage
入力容量
Input Capacitance
上昇時間
Rise Time
ターン・オン時間
スイッチング時間 Turn-On Time
Switching Time
下降時間
Fall Time
ターン・オフ時間
Turn-Off Time
記号
Symbol
I
CES
I
GES
V
CE sat)
V
GE th)
条   件
Test Conditions
V
CE
=1200V, V
GE
=0V
V
GE
=±20V, V
CE
=0V
I
C
=200A, V
GE
=15V
V
CE
=5V, I
C
=200mA
V
CE
=10V, V
GE
=0V, f=1MHz
最小
Min.
4.0
標準
Typ.
2.30
12600
0.25
0.40
0.25
0.80
最大
Max.
2.00
1.00
2.70
8.00
0.45
0.70
単½
Unit
mA
μ
A
V
V
pF
C
ies
t
r
t
on
t
f
t
off
V
CC
=600V
R
L
=2.0Ω
R
G
=7.5Ω
V
GE
=±15V
μ
s
0.35
1.10
─ 392 ─
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