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PRFMB150E6

Description
IGBT Module-Dual
CategoryDiscrete semiconductor    The transistor   
File Size263KB,4 Pages
ManufacturerNihon Inter Electronics Corporation
Websitehttp://www.niec.co.jp
Download Datasheet Parametric Compare View All

PRFMB150E6 Overview

IGBT Module-Dual

PRFMB150E6 Parametric

Parameter NameAttribute value
MakerNihon Inter Electronics Corporation
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X5
Contacts5
Reach Compliance Codeunknow
Shell connectionISOLATED
Maximum collector current (IC)150 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
JESD-30 codeR-XUFM-X5
Number of components1
Number of terminals5
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)350 ns
Nominal on time (ton)250 ns
IGBT
M½½½½½-C½½½½½½
□ 回 路 図 :
CIRCUIT
PRFMB150E6
150 A,600V
□ 外 ½ 寸 法 図 :
OUTLINE DRAWING
PRFMB150E6C
(C2E1)
1
(E2)
2
(C1)
3
7(G2)
6(E2)
12.0 11.0 12.0 11.0 12.0
94.0
80
±0.25
2-Ø6.5
1
48.0
16.0
14.0
2
3
7
6
12
1
94
80
± 0 .2 5
11 12 11
2
12
3
7
6
2-Ø 5.5
4
12
4
3-M5
23.0
23.0
17.0
4-fasten tab
#110 t=0.5
21.2 7.5
3-M5
23
23
17
14
9
14
9
14
16
7
16
7
16
4-fasten tab
#110 t= 0.5
8
LABEL
7
30
+1 .0
- 0 .5
30
- 0 .5
+1.0
LABEL
PRFMB150E6
□ 最 大 定 格 :
MAXIMUM
コレクタ・エミッタ間電圧
Collector-Emitter Voltage
ゲ ー ト・エ ミ ッ タ 間 電 圧
Gate-Emitter Voltage
コ レ ク タ 電 流
Collector Current
コ レ ク タ 損 失
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
圧(Terminal to Base AC,1½inute)
Isolation Voltage
Module Base to Heatsink
締 め 付 け ト ル ク
Mounting Torque
Busbar to Main Terminal
□ 電 気 的 特 性
DC
1½½
PRFMB150E6C
Dimension:[mm½
RATINGS
(T
=25℃)
S½½½½½
CES
GES
CP
½
½½½
ISO
½½½
R½½½½ V½½½½
600
±20
150
300
560
-40½+150
-40½+125
2,500
U½½½
(RMS)
3 3 .6
( 0 )
( 0 )
2 2 .4
N・½
(kgf½cm)
I½½½
PDMB150E6
3 3 .6
( 0 )
( 0 )
3 3 .6
PDMB150E6C
ELECTRICAL CHARACTERISTICS
(T
=25℃)
S½½½½½
CES
GES
CE(½½½)
GE(½½)
½½½
上 昇 時 間
ターンオン時間
下 降 時 間
ターンオフ時間
Rise
Turn-on
Fall
Turn-off
Time
Time
Time
Time
½
½
½
½½
½
½
½
½½½
T½½½ C½½½½½½½½
CE
= 600V, V
GE
= 0V
GE
= ±20V,V
CE
= 0V
= 150A,V
GE
= 15V
CE
= 5V,I
= 150mA
CE
= 10V,V
GE
= 0V,½= 1MH
CC
=
=
=
GE
=
300V
2.0Ω
5.1Ω
±15V
M½½.
4.0
T½½.
2.1
7,500
0.15
0.25
0.10
0.35
M½½.
1.0
1.0
2.6
8.0
0.30
0.40
0.35
0.70
U½½½
½A
μA
½F
C½½½½½½½½½½½½½
コ レ ク タ 遮 断 電 流
Collector-Emitter Cut-Off Current
ゲ ー ト 漏 れ 電 流
Gate-Emitter Leakage Current
コレクタ・エミッタ間½和電圧
Collector-Emitter Saturation Voltage
ゲ ー ト し き い 値 電 圧
Gate-Emitter Threshold Voltage
Input Capacitance
スイッチング時間
Switching Time
6
23
35
μ½
□フリーホイーリングダイオードの 特 性:
FREE
I½½½
Forward Current
C½½½½½½½½½½½½½
Peak Forward Voltage
逆 回 復 時 間
Reverse Recovery Time
WHEELING DIODE RATINGS & CHARACTERISTICS
(T
=25℃)
S½½½½½
FM
S½½½½½
½
½½
R½½½½ V½½½½
150
300
T½½½ C½½½½½½½½
= 150A,V
GE
= 0V
= 150A,V
GE
= -10V
½i/½t= 300A/μs
M½½.
T½½.
1.9
0.15
M½½.
2.4
0.25
U½½½
DC
1½½
U½½½
μ½
□ 熱 的 特 性 :
THERMAL CHARACTERISTICS
C½½½½½½½½½½½½½
IGBT
Thermal Impedance
Diode
S½½½½½
Rth(j-c)
T½½½ C½½½½½½½½
Junction to Case
(Tc測定点チップ直下)
M½½.
T½½.
M½½.
0.22
0.45
U½½½
℃/W
00
日本インター株式会社

PRFMB150E6 Related Products

PRFMB150E6 PRFMB150E6C
Description IGBT Module-Dual IGBT Module-Dual
Maker Nihon Inter Electronics Corporation Nihon Inter Electronics Corporation
Parts packaging code MODULE MODULE
package instruction FLANGE MOUNT, R-XUFM-X5 FLANGE MOUNT, R-XUFM-X5
Contacts 5 5
Reach Compliance Code unknow unknow
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 150 A 150 A
Collector-emitter maximum voltage 600 V 600 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
JESD-30 code R-XUFM-X5 R-XUFM-X5
Number of components 1 1
Number of terminals 5 5
Maximum operating temperature 150 °C 150 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
transistor applications POWER CONTROL POWER CONTROL
Transistor component materials SILICON SILICON
Nominal off time (toff) 350 ns 350 ns
Nominal on time (ton) 250 ns 250 ns
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