ECO-PAC
TM
2
IGBT Module
Short Circuit SOA Capability
Square RBSOA
Preliminary Data Sheet
PSIG
PSI
PSIS
PSSI
25/06
25/06*
25/06*
25/06*
I
C25
= 24.5 A
V
CES
= 600 V
V
CE(sat)typ.
= 2.4 V
LN 9 S18
A1
JK 10
PSIG
P 9
L 9
PSI
X 13
NTC
PSIG 25/06
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
PSI 25/06*
PSSI 25/06*
PSIS 25/06*
*NTC optional
E 2
G 10
K 10
X 16
X 18
X 15
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
600
± 20
V
V
A
A
A
µs
L 9
X 15
IK 10
NTC
X 16
RS 18
PSSI
T
C
= 25°C
T
C
= 80°C
V
GE
= ±15 V; R
G
= 68
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
V
CE
= V
CES
; V
GE
= ±15 V; R
G
= 68
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
24.5
17
30
V
CES
10
82
L9
F1
AC 1
AC 1
PSIS
W
T 16
X 15
R S 18
IK 1 0
X 16
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
NTC
min.
typ. max.
2.4
2.9
2.9
6.5
0.6
2.7
100
30
45
270
40
0.7
0.5
8
3
Features
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
R
thJC
R
thJH
I
C
= 25 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 0.4 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
4.5
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Package with DCB ceramic base plate
Isolation voltage 3000 V∼
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
UL registered, E 148688
V
CE
= 0 V; V
GE
= ± 20 V
Applications
AC and DC motor control
AC servo and robot drives
power supplies
welding inverters
Inductive load, T
VJ
= 125°C
V
CE
= 300 V; I
C
= 15 A
V
GE
= 15/0 V; R
G
= 68
Ω
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
High power density
Small and light weight
Leads with expansion bend for
stress relief
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
1.52 K/W
K/W
Caution:
These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
©
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSI PSIS PSSI 25/06
Reverse diodes (FRED)
Symbol
I
F25
I
F80
Symbol
V
F
I
RM
t
rr
R
thJC
R
thJH
Conditions
T
C
= 25°C
T
C
= 80°C
Maximum Ratings
18.5
12.0
A
A
Package style and outline
Dimensions in mm (1mm = 0.0394“)
PSIG
Conditions
I
F
= 15 A; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 10 A; di
F
/dt = 400 A/µs; T
VJ
= 125°C
V
R
= 300 V; V
GE
= 0 V
with heatsink compound (0.42 K/m.K; 50 µm)
Characteristic Values
min. typ. max.
2.58
1.8
7
70
7
2.64
V
V
A
ns
3.5 K/W
K/W
Temperature Sensor NTC
Symbol
R
25
B
25/50
Conditions
T = 25°C
Characteristic Values
min. typ.
4.75
5.0
3375
max.
5.25 kΩ
K
PSI
Module
Symbol
T
VJ
T
stg
V
ISOL
M
d
a
Symbol
d
S
d
A
Weight
PSIS
I
ISOL
≤
1 mA; 50/60 Hz
Mounting torque (M4)
Max. allowable acceleration
Conditions
Maximum Ratings
-40...+150
-40...+150
3000
1.5 - 2.0
14 - 18
50
°
C
°
C
V~
Nm
lb.in.
m/s
2
Conditions
Creepage distance on surface
(Pin to heatsink)
Strike distance in air
(Pin to heatsink)
Characteristic Values
min. typ.
11.2
11.2
24
max.
mm
mm
g
PSSI
©
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSI PSIS PSSI 25/06
50
A
I
C
50
A
40
30
11V
T
J
= 25°C
V
GE
= 17V
15V
13V
11V
40
30
20
10
9V
V
GE
= 17V
15V
13V
I
C
20
T
J
= 125°C
10
14T60
9V
14T60
0
0
1
2
3
V
CE
0
4
V
5
0
1
2
3
V
CE
4
V
5
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
50
A
50
A
40
30
T
J
= 125°C
T
J
= 25°C
40
I
C
I
F
30
20
V
CE
= 20V
20
10
T
J
= 125°C
T
J
= 25°C
14T60
10
0
4
6
8
10
12
V
GE
0
14T60
14
V
16
0
1
2
V
F
V
3
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
40
A
t
rr
20
V
V
GE
15
120
ns
30
V
CE
= 300V
I
C
= 15A
90
T
J
= 125°C
V
R
= 300V
I
F
= 15A
I
RM
10
20
60
5
14T60
10
I
RM
30
14T60
0
0
20
40
60
Q
G
0
80
0
200
400
600
-di/dt
0
nC
800
A/µs
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
©
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSI PSIS PSSI 25/06
3
mJ
V
CE
= 300V
V
GE
= ±15V
R
G
= 68Ω
T
VJ
= 125°C
60
t
d(on)
ns
40
t
r
t
2,0
mJ
E
off
1,5
t
d(off)
400
V
CE
= 300V
V
GE
= ±15V
ns
t
2
R
G
= 68Ω
300
T
VJ
= 125°C
1,0
1
E
on
14T60
E
off
200
20
0,5
t
f
0
100
0
0
10
20
I
C
0,0
0
10
20
I
C
30
14T60
0
30
A
A
Fig. 7 Typ. turn on energy and switching
Fig. 8
Typ. turn off energy and switching
times versus collector current times
versus collector current
400
2,0
mJ
V
CE
= 300V
V
GE
= ±15V
I
C
= 15A
T
VJ
= 125°C
60
t
d(on)
ns
45
E
on
30
t
r
0,8
mJ
t
E
off
0,6
V
CE
= 300V
V
GE
= ±15V
I
C
= 15A
T
VJ
= 125°C
t
d(off)
E
off
ns
300
t
1,5
1,0
0,4
200
0,5
15
0,2
t
f
100
0,0
0
20
40
60
80
R
G
14T60
0
0,0
0
20
40
60
80
R
G
14T60
0
100
Ω
120
100
Ω
120
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
10
K/W
1
Z
thJC
0,1
diode
40
A
30
IGBT
20
0,01
10
R
G
= 68
Ω
T
VJ
= 125°C
0,001
single pulse
14T60
0
0
100
200
300
400
500
V
600
700
V
0,0001
0,00001 0,0001 0,001
VDI...25-06P1
0,01
0,1
1
s 10
Fig. 11 Reverse biased safe operating area
Fig. 12 Typ. transient thermal impedance RBSOA
©
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
