IGBT Module
Short Circuit SOA Capability
Square RBSOA
Preliminary Data Sheet
S15
R15
A15
A7
A9
D1
A1
U1
V1
G15
V12
V13
K1
G1
V3
PSII 30/06*
I
C80
=
V
CES
=
V
CE(sat)typ.
=
ECO-TOP
TM
1
29 A
600 V
2.4 V
N15
V9
V10
Q1
N1
V6
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
Conditions
T
VJ
= 25°C to 150°C
T
C
= 25°C
T
C
= 80°C
V
GE
= ±15 V; R
G
= 33
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
V
CE
= V
CES
; V
GE
= ±15 V; R
G
= 33
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Conditions
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
R
thJC
R
thJH
I
C
= 50 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 0.7 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
CE
= 0 V; V
GE
= ± 20 V
t
e
e
h r
s e
ta nd
a u
d l
e til
t
v s
n
ti t
e
a c
t
n u opm
te od el
r ev
p d
Maximum Ratings
600
typical picture, for pin
configuration see outline
drawing
*NTC optional
V
± 20
V
42.5
29
60
V
CES
A
A
A
10
µs
W
130
Features
(T
VJ
Characteristic Values
= 25°C, unless otherwise specified)
min.
typ. max.
2.4
2.9
2.9
•
V
V
•
•
•
•
•
•
•
•
•
•
•
•
•
•
4.5
6.5
V
Package with DCB ceramic
base plate
Isolation voltage 3000 V
∼
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
UL Release applied
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
0.6
1.7
mA
mA
Applications
100
nA
Inductive load, T
VJ
= 125°C
V
CE
= 300 V; I
C
= 30 A
V
GE
= 15/0 V; R
G
= 33
Ω
50
50
270
40
1.4
1.0
16
ns
ns
ns
ns
mJ
mJ
AC and DC motor control
AC servo and robot drives
Power supplies
Welding inverters
Advantages
Easy to mount with four screws
Space and weight savings
Improved temperature and
power cycling capability
High power density
Small and light weight
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
nF
0.96 K/W
K/W
1.92
Caution:
These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Reverse diodes (FRED)
Symbol
I
F25
I
F80
Symbol
V
F
I
RM
t
rr
R
thJC
R
thJH
Conditions
T
C
= 25°C
T
C
= 80°C
Conditions
I
F
= 30 A; T
VJ
= 25°C
T
VJ
= 125°C
Maximum Ratings
30
19
A
A
Characteristic Values
min.
typ. max.
2.57
1.8
7
50
2.84
V
V
I
F
= 15 A; di
F
/dt = 400 A/µs; T
VJ
= 125°C
V
R
= 300 V; V
GE
= 0 V
with heatsink compound (0.42 K/m.K; 50 µm)
Temperature Sensor NTC
Symbol
R
25
B
25/50
Conditions
T = 25°C
Module
Symbol
T
VJ
T
stg
V
ISOL
M
d
a
Symbol
d
S
d
A
Weight
Conditions
I
ISOL
≤
1 mA; 50/60 Hz
Mounting torque (M5)
Max. allowable acceleration
Conditions
Creepage distance on surface
(Pin to heatsink)
Strike distance in air
(Pin to heatsink)
t
e
e
h r
s e
ta nd
a u
d l
e til
t
v s
n
ti t
e
a c
t
n u opm
te od el
r ev
p d
A
ns
4.6
2.3 K/W
K/W
Characteristic Values
min. typ. max.
4.75
5.0
3375
5.25 kΩ
K
Maximum Ratings
-40...+125
-40...+150
3000
°C
°C
V~
3
26
50
Nm
lb.in.
m/s
2
Characteristic Values
min. typ. max.
11.2
11.2
mm
mm
g
86
Package style and outline
Dimensions in mm (1mm = 0.0394“)
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
90
A
75
I
C
90
A
75
V
GE
= 17V
15V
13V
I
C
60
T
J
= 25°C
11V
60
45
30
15
0
V
GE
= 17 V
15 V
13 V
11V
45
30
T
J
= 125°C
9V
25T60
15
0
9V
0
1
Fig. 1 Typ. output characteristics
90
75
A
I
C
60
45
30
15
0
T
J
= 125°C
4
6
Fig. 3 Typ. transfer characteristics
20
V
t
e
e
h r
s e
ta nd
a u
d l
e til
t
v s
n
ti t
e
a c
t
n u opm
te od el
r ev
p d
2
3
4
5
V
25T60
6
0
1
2
3
4
5
V
6
V
CE
V
CE
Fig. 2 Typ. output characteristics
90
A
75
60
45
30
15
V
CE
= 20V
I
F
T
J
= 125°C
T
J
= 25°C
T
J
= 25°C
25T60
0
25T60
8
10
12
14
V
16
0,0
0,5
1,0
1,5
V
2,0
V
GE
V
F
Fig. 4 Typ. forward characteristics of
free wheeling diode
50
40
A
150
120
ns
90
t
rr
15
V
GE
I
RM
t
rr
30
10
V
CE
= 300 V
I
C
= 30 A
20
10
I
RM
25T60
5
T
J
= 125°C
V
R
= 300 V
I
F
= 30 A
60
30
MUBW3006A7
0
0
40
80
120
nC
Q
G
0
160
0
200
400
600
-di/dt
800
A/µs
1000
0
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
V
CE
= 300V
mJ
V
GE
= ±15V
8
80
t
r
t
d(on)
E
on
ns
60
t
2,0
mJ
E
off
1,5
V
CE
= 300V
V
GE
= ±15V
R
G
= 33Ω
T
VJ
= 125°C
E
off
400
ns
300
t
E
on
6
R
G
= 33Ω
T
VJ
= 125°C
4
40
1,0
t
d(off)
200
2
0
0
Fig. 7 Typ. turn on energy and switching
E
on
V
CE
= 300V
mJ
V
GE
= ±15V
= 30A
I
3
C
T
VJ
= 125°C
4
2
1
0
0
10
Fig. 9 Typ. turn on energy and switching
t
e
e
h r
s e
ta nd
a u
d l
e til
t
v s
n
ti t
e
a c
t
n u opm
te od el
r ev
p d
20
0,5
100
t
f
25T60
20
40
60
A
0
0,0
25T60
0
20
40
60 A
0
I
C
I
C
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
400
ns
300
t
t
d(off)
t
d(on)
80
ns
t
r
60
t
E
off
V
CE
= 300 V
mJ
V = ±15 V
GE
I
C
= 30 A
1,5
T
VJ
= 125°C
2,0
E
on
E
off
200
1,0
40
0,5
100
25T60
t
f
20
30
40
50
60
70
Ω
80
20
0,0
25T60
0
10
20
30
40
50
60
70
Ω
80
0
R
G
R
G
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
diode
IGBT
80
A
I
CM
10
K/W
Z
thJC
1
60
0,1
40
0,01
20
R
G
= 33
Ω
T
VJ
= 125°C
25T60
0,001
single pulse
0
0
100
200
300
400
500
600
V
CE
700
V
0,0001
0,00001 0,0001 0,001
VDI...50-06P1
0,01
0,1
t
1
s 10
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance
RBSOA
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
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