ECO-PAC
TM
2
MOSFET Module
PSMG 60/08
S
G
D
Preliminary Data Sheet
V
DSS
=
I
D25
=
R
DS(on)
=
≤
t
rr
800 V
60 A
0.12
Ω
250 ns
MOSFET
(data related to single chip)
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
V
ISOL
V
ISOL
M
d
a
Weight
Symbol
V
DSS
V
GS(th)
Test Conditions
T
J
= 25 °C to 150 °C
T
J
= 25 °C to 150 °C, R
GS
= 1 MΩ
continuous
transient
T
Case
= 25 °C
T
Case
= 25 °C, pulse width limited by T
JM
T
C
= 25 °C
T
C
= 25 °C
I
S
≤
I
DM
, di/dt
≤
100A/µs, V
DD
≤
V
DSS
,
T
J
≤
150 °C, R
G
= 2
Ω
Maximum Ratings
800
800
±20
±30
60
240
60
64
3
5
1200
-55...+150
+150
-55...+150
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
V~
V~
Nm
lb.in.
m/s
2
g
Typical picture; changes
of the pin configuration
is reserved.
Features
T
Case
= 25 °C
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
50/60 Hz, RMS
I
ISOL
≤
1 mA
Mounting torque
t = 1 min.
t=1s
(M4)
2500
3000
1.5
14
50
26
Package with DCB ceramic base plate
Isolation voltage 3000 V
∼
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
Low R
DS(on)
HDMOS
TM
process
Fast intrinsic Rectifier
UL registerd, E 148688
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
max. allowed acceleration
Test Conditions
V
GS
= 0 V, I
D
= 3 mA
V
DSS
temperature coefficient
min.
Characteristic Values
(T
J
= 25 °C, unless otherwise specified)
800
0.096
3.0
5.0
-0.214
±
200
100
2
0.12
V
%/K
V
V
%/K
nA
µA
mA
Ω
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
High power density
Small and light weight
typ.
min.
max.
V
GS
= V
DS
, I
D
= 8 mA
V
GS(th)
temperature coefficient
typ.
I
GSS
I
DSS
R
DS(on)
V
DS
= 0 V
,
V
GS
=
±
20 V
V
DS
= V
DSS
,
V
GS
= 0 V,
V
GS
T
J
=
max.
25 °C max.
T
J
= 125 °C max.
= 10 V, I
D
= 0.5 . I
D25
max.
pulse test, t
≤
300 µs,
duty cycle d
≤
2 %
ATTENTION:
All given data are derived from
similar modules or estimated from chip data.
Caution:
These devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
ECO-PAC
TM
2
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
R
thJC
R
thCK
Test Conditions
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
V
GS
= 10 V,
V = 0.5 . V
DS
DSS
,
Characteristic Values
(T
J
= 25 °C, unless otherwise specified)
}
}
typ.
typ.
typ.
typ.
typ.
typ.
typ.
15000
1840
440
45
45
100
40
0.45
0.60
pF
pF
pF
ns
ns
ns
ns
K/W
K/W
I
D
= 0.5 . I
D25
R
G
= 1
Ω
(External)
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Test Conditions
V
GS
= 0 V
repetitive
pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0 V
max.
T
J
= 25 °C
max.
T
J
=125 °C
max.
Characteristic Values
(T
J
= 25 °C, unless otherwise specified)
max.
max.
34
136
1.5
250
400
1.4
10
A
A
V
ns
ns
µC
A
}
pulse test, t
≤
300 µs, duty cycle d
≤
2 %
I
F
= I
S
,
-di/dt = 100 A/µs,
T
J
= 25 °C
typ.
V
R
= 100 V
typ.
Package style and preliminary
outline
Dimensions in mm (1mm = 0.0394“)
Characteristic pin configuration;
changes of the pin configuration
is reserved.
ATTENTION:
All given data are derived from similar
modules or estimated from chip data.
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
京公网安备 11010802033920号
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