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BZM55B3V9

Description
Zener Diode, 3.9V V(Z), 2%, 0.5W,
CategoryDiscrete semiconductor    diode   
File Size59KB,6 Pages
ManufacturerVishay Telefunken (Vishay)
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

BZM55B3V9 Overview

Zener Diode, 3.9V V(Z), 2%, 0.5W,

BZM55B3V9 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay Telefunken (Vishay)
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance90 Ω
JESD-609 codee0
Number of components1
Maximum operating temperature175 °C
Maximum power dissipation0.5 W
Nominal reference voltage3.9 V
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Maximum voltage tolerance2%
Working test current5 mA
BZM55B...
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D
D
D
D
D
D
D
D
D
D
Saving space
Hermetic sealed parts
Fits onto SOD 323 / SOT 23 footprints
Electrical data identical with the devices
BZT55B... / TZMB...
Very sharp reverse characteristic
Low reverse current level
Very high stability
Low noise
Available with tighter tolerances
V
Z
–tolerance
±
2%
96 12315
Applications
Voltage stabilization
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
R
thJA
300K/W
x
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
–65...+175
Unit
mW
mA
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Junction ambient mounted on epoxy–glass hard tissue, Fig. 1
Junction tie point 35
m
m copper clad, 0.9 mm
2
copper area per electrode
Symbol
R
thJA
R
thJL
Value
500
300
Unit
K/W
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
Document Number 85597
Rev. 4, 06-Dec-00
www.vishay.com
1 (6)
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