Standard SRAM, 4KX1, 80ns, CMOS, CDIP18
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Honeywell |
| package instruction | DIP, DIP18,.3 |
| Reach Compliance Code | unknown |
| Maximum access time | 80 ns |
| I/O type | SEPARATE |
| JESD-30 code | R-XDIP-T18 |
| JESD-609 code | e0 |
| memory density | 4096 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 1 |
| Number of terminals | 18 |
| word count | 4096 words |
| character code | 4000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 4KX1 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP18,.3 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| power supply | 5 V |
| Certification status | Not Qualified |
| Maximum standby current | 0.00004 A |
| Minimum standby current | 2 V |
| Maximum slew rate | 0.005 mA |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| total dose | 100k Rad(Si) V |
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