INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU2520AW
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 800V (Min)
·High
Switching Speed
APPLICATIONS
·Designed
for use in horizontal deflection circuits of
large screen color TV receivers
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CES
Collector- Emitter Voltage(V
BE
= 0)
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
I
CM
Collector Current- Continuous
Collector Current-Peak
I
B
B
Base Current- Continuous
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1500
V
800
V
7.5
V
10
A
25
A
6
A
9
A
125
W
℃
℃
150
I
BM
Base Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
P
C
T
J
T
stg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.0
UNIT
℃/W
R
th j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BU2520AW
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 100mA; I
B
= 0, L= 25mH
800
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 1mA; I
C
= 0
7.5
V
V
CE
(sat)
V
BE
(sat)
I
CES
Collector-Emitter Saturation Voltage
I
C
= 6A; I
B
= 1.2A
B
5.0
V
Base-Emitter Saturation Voltage
I
C
= 6A; I
B
= 1.2A
B
1.1
1.0
2.0
1.0
V
Collector Cutoff Current
V
CE
= 1500V; V
BE
= 0
V
CE
= 1500V; V
BE
= 0; T
C
=125℃
V
EB
= 7.5V; I
C
= 0
mA
I
EBO
Emitter Cutoff Current
h
FE-1
DC Current Gain
h
FE-2
DC Current Gain
C
OB
Output Capacitance
Switching times
t
stg
t
f
Storage Time
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I
C
= 0.1A; V
CE
= 5V
I
C
= 6A; V
CE
= 5V
5
I
E
= 0; V
CB
= 10V; f
test
= 1MHz
I
C
= 6A , I
B(
end
)
= 1.0A;L
C
= 650μH;
L
B
= 5.3μH; C
fb
= 19nF;
-V
BB
= 4V; (-dI
B
/dt= 0.8A/μs)
mA
13
9.5
115
pF
5.5
μs
μs
Fall Time
0.5
isc Website：www.iscsemi.cn
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