BSD 223P
OptiMOS
-P Small-Signal-Transistor
Feature
•
Dual P-Channel
•
Enhancement mode
•
Super Logic Level (2.5 V rated)
•
150°C operating temperature
•
Avalanche rated
•
dv/dt rated
•
Qualified according to AEC Q101
•
Halogen-free according to IEC61249-2-21
Type
BSD 223P
Package
PG-SOT-363
Tape & Reel
Marking
Gate
pin 2,5
Source
pin 1,4
MOSFET1: 1,2,6
MOSFET2: 3,4,5
Product Summary
V
DS
R
DS(on)
I
D
-20
1.2
-0.39
PG-SOT-363
4
V
Ω
A
5
6
2
3
1
VPS05604
Drain
pin 6,3
H6327:
3000pcs/r
X1s
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
A
=25°C
T
A
=70°C
Symbol
I
D
Value
-0.39
-0.31
Unit
A
Pulsed drain current
T
A
=25°C
I
D puls
E
AS
dv/dt
V
GS
P
tot
T
j ,
T
stg
-1.56
1.4
-6
±12
0.25
-55... +150
55/150/56
mJ
kV/µs
V
W
°C
Avalanche energy, single pulse
I
D
=-0.39 A ,
V
DD
=-10V,
R
GS
=25Ω
Reverse diode dv/dt
I
S
=-0.39A,
V
DS
=-16V, di/dt=200A/µs,
T
jmax
=150°C
Gate source voltage
Power dissipation
T
A
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Rev.1.4
Page 1
2011-07-13
BSD 223P
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
Thermal resistance, junction - ambient, leaded
R
thJS
R
thJA
-
-
-
-
180
500
K/W
Symbol
min.
Values
typ.
max.
Unit
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain-source breakdown voltage
V
GS
=0,
I
D
=-250µA
Symbol
min.
V
(BR)DSS
V
GS(th)
I
DSS
-
-
I
GSS
R
DS(on)
R
DS(on)
-
-
-
-20
-0.6
Values
typ.
-
-0.9
max.
-
-1.2
Unit
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=-1.5µA
Zero gate voltage drain current
V
DS
=-20V,
V
GS
=0,
T
j
=25°C
V
DS
=-20V,
V
GS
=0,
T
j
=150°C
µA
-0.1
-10
-10
1.27
0.7
-1
-100
-100
2.1
1.2
nA
Ω
Gate-source leakage current
V
GS
=-12V,
V
DS
=0
Drain-source on-state resistance
V
GS
=-2.5V,
I
D
=-0.29A
Drain-source on-state resistance
V
GS
=-4.5,
I
D
=-0.39A
Rev.1.4
Page 2
2011-07-13
BSD 223P
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-10V,
V
GS
=-4.5V,
I
D
=-0.39A,
R
G
=6Ω
çV
DS
ç≥2*çI
D
ç*R
DS(on)max
I
D
=-0.31A
V
GS
=0,
V
DS
=-15V,
f=1MHz
Symbol
Conditions
min.
0.35
-
-
-
-
-
-
-
Values
typ.
0.7
45
21
17
3.8
5
5.1
3.2
max.
-
56
26
22
5.7
7.5
7.6
4.8
Unit
S
pF
ns
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
I
SM
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
SD
t
rr
Q
rr
V
GS
=0,
I
F
=-0.39
V
R
=-10V, |I
F
|
=
|l
D
|,
di
F
/dt=100A/µs
Q
gs
Q
gd
Q
g
V
DD
=-10V,
I
D
=-0.39A
-
-
-
-
-0.04
-0.4
-0.5
-2.2
-0.05 nC
-0.5
-0.62
-2.7
V
V
DD
=-10V,
I
D
=-0.39A,
V
GS
=0 to -4.5V
V
(plateau)
V
DD
=-10V,
I
D
=-0.39A
I
S
T
A
=25°C
-
-
-
-
-
-
-
-1
7.6
1.1
-0.39 A
-1.56
-1.33 V
9.5
1.4
ns
nC
Rev.1.4
Page 3
2011-07-13
BSD 223P
1 Power dissipation
P
tot
=
f
(T
A
)
BSD 223P
2 Drain current
I
D
=
f
(T
A
)
parameter: |V
GS
|≥ 4.5 V
-0.42
BSD 223P
0.28
W
0.24
0.22
0.2
A
-0.36
-0.32
-0.28
P
tot
I
D
-0.24
-0.2
-0.16
-0.12
-0.08
-0.04
0
0
20
40
60
80
100
120
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
°C
160
20
40
60
80
100
120
°C
160
T
A
T
A
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
A
= 25 °C
-10
1
BSD 223P
4 Transient thermal impedance
Z
thJA
=
f
(t
p
)
parameter :
D
=
t
p
/T
10
3
BSD 223P
K/W
A
t
p = 390.0µs
10
2
/
I
D
I
D
=
V
DS
-10
0
Z
thJA
10
1
1 ms
R
DS
(
on
)
10
0
D = 0.50
0.20
-10
-1
10 ms
10
-1
0.10
0.05
0.02
10
-2
0.01
single pulse
-10
-2 -1
-10
-10
0
DC
1
-10
V
-10
2
10
-3 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
V
DS
Rev.1.4
Page 4
t
p
2011-07-13
BSD 223P
5 Typ. output characteristic
I
D
=
f
(V
DS
)
parameter:
T
j =25°C
0.7
6 Typ. drain-source on resistance
R
DS(on)
=
f
(I
D
)
parameter:
V
GS
4
2.5V
R
DS(on)
3V
4V
A
4.5V
6V
7V
8V
0.5
10V
Ω
3
2.5
0.4
2
0.3
2.2V
2.2V
2.5V
3V
4V
4.5V
6V
7V
8V
10V
-I
D
1.5
0.2
1
0.1
0.5
0
0
0.3
0.6
0.9
V
1.5
0
0
0.1
0.2
0.3
0.4
0.5
A
0.7
-V
DS
-I
D
7 Typ. transfer characteristics
I
D
=
f
(
V
GS
); |V
DS
|≥ 2 x |I
D
| x
R
DS(on)max
parameter:
T
j
= 25 °C
0.7
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter:
T
j = 25 °C
1.1
S
A
0.9
0.5
0.8
-I
D
g
fs
0.4
0.3
0.2
0.1
0
0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.5
1
1.5
2
V
3
0
0
0.1
0.2
0.3
0.4
0.5
A
0.7
-V
GS
Rev.1.4
Page 5
-I
D
2011-07-13
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