BCX53BK datasheet, PDF - EEWORLD Datasheet

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BCX53BK: DescriptionPower Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size87KB，2 Pages; ManufacturerCentral Semiconductor

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BCX53BK Overview

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3

BCX53BK Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	PLASTIC PACKAGE-3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	R-PSSO-F3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	1.2 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	FLAT
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz

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BCX51

BCX52

BCX53

SURFACE MOUNT

PNP SILICON TRANSISTOR

Central

Semiconductor Corp.

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BCX51,

BCX52, and BCX53 types are PNP Silicon

Transistors manufactured by the epitaxial planar

process, epoxy molded in a surface mount

package, designed for high current general

purpose amplifier applications.

MARKING CODE:

(SEE TABLE ON FOLLOWING PAGE)

SYMBOL

VCBO

VCEO

VEBO

ICM

IBM

TJ, Tstg

BCX51

BCX52

BCX53

100

5.0

1.0

1.5

100

200

1.3

-65 to +150

UNITS

°C

°C/W

SOT-89 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Base Current

Peak Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

VCB=30V

ICBO

VCB=30V, TA=125°C

IEBO

VEB=5.0V

BVCBO

IC=100μA (BCX51)

BVCBO

IC=100μA (BCX52)

BVCBO

IC=100μA (BCX53)

100

BVCEO

IC=10mA (BCX51)

BVCEO

IC=10mA (BCX52)

BVCEO

IC=10mA (BCX53)

VCE(SAT)

IC=500mA, IB=50mA

VBE(ON)

VCE=2.0V, IC=500mA

hFE

VCE=2.0V, IC=5.0mA

hFE

VCE=2.0V, IC=150mA

hFE

VCE=2.0V, IC=150mA

(BCX51-10, BCX52-10, BCX53-10)

hFE

VCE=2.0V, IC=150mA

(BCX51-16, BCX52-16, BCX53-16)

100

hFE

VCE=2.0V, IC=500mA

VCE=5.0V, IC=10mA, f=100MHz

TYP

MAX

100

0.5

1.0

250

160

250

UNITS

μA

MHz

R4 (3-April 2008)

BCX53BK Related Products

	BCX53BK	BCX52LEADFREE	BCX51LEADFREE	BCX51TR	BCX52TR	BCX53TR
Description	Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3	Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3	Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3	Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3	Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3	Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
package instruction	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3
Contacts	3	3	3	3	3	3
Reach Compliance Code	unknown	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	1 A	1 A	1 A	1 A	1 A	1 A
Collector-emitter maximum voltage	80 V	60 V	45 V	45 V	60 V	80 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	40	40	40	40	40
JESD-30 code	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3
JESD-609 code	e0	e3	e3	e0	e0	e0
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal surface	TIN LEAD	MATTE TIN (315)	Matte Tin (Sn)	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz
Maximum power dissipation(Abs)	1.2 W	-	-	1.2 W	1.2 W	1.2 W

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