DISCRETE SEMICONDUCTORS
DATA SHEET
BLV958; BLV958FL
UHF power transistors
Product specification
Supersedes data of 2000 Jan 12
2000 Nov 02
Philips Semiconductors
Product specification
UHF power transistors
FEATURES
•
Internal input and output matching for easy matching,
high gain and efficiency
•
Poly-silicon emitter ballasting resistors for an optimum
temperature profile
•
Gold metallization ensures excellent reliability.
APPLICATIONS
•
Base stations in the 800 to 960 MHz frequency range.
PINNING - SOT391A
PIN
1
2
3
SYMBOL
c
b
e
base
emitter; connected to flange
DESCRIPTION
collector
PINNING - SOT391B
PIN
1
2
Ground plane
DESCRIPTION
BLV958; BLV958FL
NPN silicon planar epitaxial transistors primarily intended
for common emitter class-AB operation. The transistors
have internal input and output matching by means of MOS
capacitors. The encapsulations are a 2-lead rectangular
SOT391A flange package and a SOT391B flangeless
package, both with a ceramic cap.
SYMBOL
c
b
e
base
DESCRIPTION
collector
emitter
handbook, halfpage
1
c
b
3
handbook, halfpage
1
c
b
2
Top view
MAM203
e
2
Top view
MSA465
e
Fig.1 Simplified outline (SOT391A) and symbol.
Fig.2 Simplified outline (SOT391B) and symbol.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in a common emitter test circuit.
MODE OF
OPERATION
CW, class-AB
f
(MHz)
900
960
V
CE
(V)
26
26
P
L
(W)
75
75
G
p
(dB)
≥8
≥8.5
η
C
(%)
≥50
≥50
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
2000 Nov 02
2
Philips Semiconductors
Product specification
UHF power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
operating junction temperature
T
mb
≤
25
°C
CONDITIONS
open emitter
open base
open collector
BLV958; BLV958FL
MIN.
−
−
−
−
−
−
−65
−
MAX.
70
30
3
15
15
250
+150
200
UNIT
V
V
V
A
A
W
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th mb-h
Note
1. Thermal resistance is determined under specified RF operating conditions.
PARAMETER
thermal resistance from junction to
mounting base
thermal resistance from mounting base
to heatsink
CONDITIONS
P
tot
= 250 W; T
mb
= 25
°C;
note 1
VALUE
0.7
0.2
UNIT
K/W
K/W
2000 Nov 02
3
Philips Semiconductors
Product specification
UHF power transistors
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
Notes
1. Measured under pulsed conditions: t
p
≤
500
µs; δ ≤
0.01.
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
CONDITIONS
open emitter; I
C
= 60 mA
open base; I
C
= 150 mA
open collector; I
E
= 3 mA
V
BE
= 0; V
CE
= 28 V
V
CE
= 10 V; I
C
= 4.5 A; note 1;
see Fig 3
V
CB
= 26 V; I
E
= i
e
= 0;
f = 1 MHz; note 2; see Fig 4
BLV958; BLV958FL
MIN.
70
30
3
−
30
−
TYP.
−
−
−
−
−
75
MAX.
−
−
−
5
120
−
UNIT
V
V
V
mA
pF
2. Value of C
c
is that of the die only, it is not measurable because of internal matching network.
handbook, halfpage
120
MLD243
handbook, halfpage
200
MLD244
h FE
Cc
(pF)
(1)
150
80
(2)
100
40
50
0
0
4
8
12
I C (A)
16
0
0
10
20
30
VCB (V)
40
Measured under pulsed conditions; t
p
≤
500
µs; δ ≤
0.01.
(1) V
CE
= 26 V.
(2) V
CE
= 10 V.
Value C
c
is that of the die only, it is not measurable because of
internal matching network.
I
E
= i
e
= 0; f = 1 MHz.
Fig.3
DC current gain as a function of collector
current; typical values.
Fig.4
Collector capacitance as a function of
collector-base voltage; typical values.
2000 Nov 02
4
Philips Semiconductors
Product specification
UHF power transistors
BLV958; BLV958FL
APPLICATION INFORMATION
RF performance at T
h
= 25
°C
in a common emitter, class-AB test circuit; R
th mb-h
= 0.2 K/W.
MODE OF OPERATION
f
(MHz)
900
CW, class-AB
960
V
CE
(V)
26
26
I
CQ
(mA)
200
200
P
L
(W)
75
75
G
p
(dB)
≥8
typ. 9.5
≥8.5
typ. 9.5
η
C
(%)
≥50
typ. 55
≥50
typ. 55
Ruggedness in class-AB operation
The transistors are capable of withstanding a load mismatch corresponding to VSWR = 4 : 1 through all phases at rated
output power, under the following conditions: V
CE
= 26 V; f = 960 MHz; I
CQ
= 200 mA; T
h
= 25
°C;
R
th mb-h
= 0.2 K/W.
handbook, halfpage
12
MLD245
60
η
C
(%)
40
MLD246
handbook, halfpage
120
Gp
(dB)
8
Gp
PL
(W)
80
η
C
4
20
40
0
0
20
40
60
0
80
100
P L (W)
0
0
4
8
12
P i (W)
16
V
CE
= 26 V; I
CQ
= 200 mA; f = 960 MHz.
V
CE
= 26 V; I
CQ
= 200 mA; f = 960 MHz.
Fig.5
Power gain and collector efficiency as
functions of load power; typical values.
Fig.6
Load power as a function of input power;
typical values.
2000 Nov 02
5
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