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M58LR256GU90ZC5U

Description
Flash, 16MX16, 90ns, PBGA44, 8 X 10 MM, 0.50 MM PITCH, VFBGA-44
Categorystorage    storage   
File Size887KB,115 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance  
Download Datasheet Parametric View All

M58LR256GU90ZC5U Overview

Flash, 16MX16, 90ns, PBGA44, 8 X 10 MM, 0.50 MM PITCH, VFBGA-44

M58LR256GU90ZC5U Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeBGA
package instruction8 X 10 MM, 0.50 MM PITCH, VFBGA-44
Contacts44
Reach Compliance Codecompliant
ECCN code3A991.B.1.A
Maximum access time90 ns
startup blockTOP
JESD-30 codeR-PBGA-B44
JESD-609 codee1
length10 mm
memory density268435456 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals44
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize16MX16
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1 mm
Maximum supply voltage (Vsup)2 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch0.5 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
typeNOR TYPE
width8 mm
M58LR256GU, M58LR256GL
M58LR128GU, M58LR128GL
128 and 256Mbit (x16, Mux I/O, Multiple Bank, Multi-Level, Burst)
1.8V supply Flash memories
Feature summary
Supply voltage
– V
DD
= 1.7V to 2.0V for program, erase and
read
– V
DDQ
= 1.7V to 2.0V for I/O Buffers
– V
PP
= 9V for fast program
Multiplexed address/data
Synchronous / Asynchronous Read
– Synchronous Burst Read mode: 66MHz
– Random Access:
85ns (M58LR128GU/L)
90ns (M58LR256GU/L)
Synchronous Burst Read Suspend
Programming time
– 10µs typical Word program time using
Buffer Enhanced Factory Program
command
Memory organization
– Multiple Bank Memory Array:
16 Mbit (M58LR256GU/L) or
8 Mbit (M58LR128GU/L) Banks
– Parameter Blocks (Top or Bottom location)
Dual operations
– program/erase in one Bank while read in
others
– No delay between read and write
operations
Block locking
– All blocks locked at power-up
– Any combination of blocks can be locked
with zero latency
– WP for Block Lock-Down
– Absolute Write Protection with V
PP
= V
SS
Security
– 64 bit unique device number
– 2112 bit user programmable OTP Cells
Common Flash Interface (CFI)
FBGA
VFBGA44 (ZC) 8 x 10mm
VFBGA44 (ZB) 7.7 x 9mm
100,000 program/erase cycles per block
Electronic signature
– Manufacturer Code: 20h
– Top Device Codes:
M58LR256GU: 882Ch
M58LR128GU: 882Eh
– Bottom Device Codes
M58LR256GL: 882Dh
M58LR128GL: 882Fh
ECOPACK® packages available
June 2006
Rev 1
1/114
www.st.com
1

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