Philips Semiconductors Military Bipolar Memory Products
Product specification
8K-bit TTL bipolar PROM (2024x4)
82S185/185A/185B
FEATURES
•
Address access time: 55ns max
•
Input loading: -150µA max
•
On-chip address decoding
•
No separate fusing pins
•
Unprogrammed outputs are Low level
•
Fully TTL compatible
•
One chip enable input
•
Outputs: 3-State
APPLICATIONS
DESCRIPTION
The 82S185 is field-programmable, which means that custom
patterns are immediately available by following the Philips Generic I
fusing procedure. The standard 82S185 is supplied with all outputs
at logical Low. Outputs are programmed to a logic High level at any
specified address by fusing the Ni-Cr link matrix.
This device includes on-chip decoding and one chip enable input for
memory expansion. It features 3-State outputs for optimization of
word expansion in bused organizations.
ORDERING INFORMATION
DESCRIPTION
18-pin Ceramic DIP
(300mil-wide)
ORDER CODE
82S185/BVA
82S185A/BVA
82S185B/BVA
82S185/BYA
82S185A/BYA
82S185B/BYA
PACKAGE
DESIGNATOR*
GDIP1-T18
•
Sequential controllers
•
Control store
•
Random logic
•
Code conversion
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
CC
V
I
V
O
T
A
T
STG
Supply voltage
Input voltage
Output voltage Off-State
Operating temperature range
Storage temperature range
PARAMETER
18-pin Ceramic Flat Pack
GDFP2-F18
* MIL-STD 1835 or Appendix A of 1995 Military Data Handbook
RATING
+7
+5.5
+5.5
-55 to +125
-65 to +150
UNIT
V
DC
V
DC
V
DC
°
C
°
C
PIN CONFIGURATION
BLOCK DIAGRAM
A
5
ADDRESS
LINES
1:64
DECODER
64 x 128 MATRIX
A
6
A
5
A
4
A
3
A
0
A
1
A
2
A
10
GND
1
2
3
4
5
6
7
8
9
18
17
16
15
14
13
12
11
10
V
CC
A
7
A
8
A
9
O
1
O
2
O
3
O
4
CE
A
10
A
0
A
4
1:32
MUX
1:32
MUX
1:32
MUX
1:32
MUX
CE
4 3-STATE DRIVERS
O
1
O
2
O
3
O
4
OUTPUT LINES
May 30, 1990
1
853-0265 99704
Philips Semiconductors Military Bipolar Memory Products
Product specification
8K-bit TTL bipolar PROM (2024x4)
82S185/185A/185B
DC ELECTRICAL CHARACTERISTICS
SYMBOL
Input voltage
V
IL
V
IH
V
IK
Low
High
Clamp
PARAMETER
-55°C < T
A
< +125°C, 4.5V < V
CC
< 5.5V
TEST CONDITIONS
1, 2
Min
LIMITS
Typ
5
Max
0.8
2.0
V
CC
= 4.5V, I
I
= -18mA
V
CC
= 4.5V, CE = Low
I
O
= 16mA
I
O
= -2mA
V
CC
= 5.5V
V
I
= 0.45V
V
I
= 5.5V
V
CC
= 5.5V
CE = High, V
O
= 0.4V
CE = High, V
O
= 5.5V
CE = Low, V
O
= 0V, High stored
CE = High, V
CC
= 5.5V
CE = High, V
CC
= 5.0V
V
I
= 2.0V
V
O
= 2.0V
-55°C < T
A
< +125°C, 4.5V < V
CC
< 5.5V
TO
185
FROM
Min
LIMITS
Typ
5
70
Output
Address
25
40
Output
Chip Enable
30
15
Output
Chip Disable
30
15
Max
115
55
90
50
30
50
30
ns
ns
ns
ns
ns
ns
ns
UNIT
-0.8
-1.2
V
V
V
UNIT
Output voltage
V
OL
V
OH
Input current
I
IL
I
IH
Low
High
-150
40
µA
µA
Low
High
0.5
2.4
V
V
Output current
I
OZ
I
OS
I
CC
Capacitance
6
C
IN
C
OUT
Input
Output
5
8
10
13
pF
pF
Hi-Z state
Short circuit
3
-40
40
-85
90
130
µA
µA
mA
mA
-15
Supply current
AC ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
t
AA
t
CE
t
CD
Access time
4
Access time
4
185A
185B
185/185B
185A
Disable time
185/185B
185A
NOTES:
1. All voltages are with respect to network ground terminal.
2. Positive current is defined as into the terminal referenced.
3. Duration of short circuit should not exceed 1 second.
4. Tested at an address cycle time of 1µs.
5. Typical values are at V
CC
= 5V, T
A
= +25°C.
6. Guaranteed, but not tested.
May 30, 1990
2
Philips Semiconductors Military Bipolar Memory Products
Product specification
8K-bit TTL bipolar PROM (2024x4)
82S185/185A/185B
TEST LOAD CIRCUITS
V
CC
VOLTAGE WAVEFORMS
2.7V
NEGATIVE
PULSE
t
W
V
M
0.3V
t
THL(tf)
V
M
0.3V
t
TLH(tr)
0V
2.7V
3.0V
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
10
CE
GND
O
4
R
2
INCLUDES SCOPE
C
L
AND JIG
CAPACITANCE
DUT
O
1
R
1
5.0V
t
TLH(tr)
2.7V
POSITIVE
PULSE
0.3V
V
M
t
W
t
THL(tf)
3.0V
2.7V
V
M
0.3V
0V
Input Pulse Definitions
INPUT PULSE CHARACTERISTICS
V
M
Rep. Rate
1MHz
Pulse Width
500ns
t
TLH
≤5ns
t
THL
≤5ns
NOTE:
R
1
= 270Ω, R
2
= 600Ω, C
L
= 50pF.
1.5V
TIMING DIAGRAMS
ADDRESS
V
M
0V
3.0V
CE = 0
0V
V
OH
O
N
t
AA
V
M
V
OL
V
M
= 1.5V
3.0V
ADDRESS
0V
CE
V
M
CE
V
M
3.0V
0V
Hi-Z
O
N
t
CE
O
N
V
OH
V
M
V
M
t
CD
V
OH
V
M
t
CE
V
M
V
OL
t
CD
V
M
= 1.5V
Hi-Z
V
OL
May 30, 1990
3
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