ECO-PAC
TM
2
IGBT Module
PSIG 160/12
PSIS 160/12*
PSSI 160/12*
I
C25
= 169 A
V
CES
= 1200 V
V
CE(sat)typ.
= 2.9 V
Short Circuit SOA Capability
Square RBSOA
Preliminary Data Sheet
AC 1
X15
NTC
X16
L9
F1
IK 10
LMN S
A IJK
L9
T16
X15
NTC
IK 10
PSIG 160/12
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
T
C
= 25°C
T
C
= 80°C
Conditions
T
VJ
= 25°C to 150°C
X16
AC 1
PSIS 160/12*
PSSI 160/12*
Maximum Ratings
1200
± 20
169
117
200
V
CES
10
694
V
V
A
A
A
µs
W
*NTC optional
Features
V
GE
= ±15 V; R
G
= 6.8
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
V
CE
= V
CES
; V
GE
= ±15 V; R
G
= 6.8
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Conditions
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Package with DCB ceramic base plate
Isolation voltage 3000 V∼
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
UL registered, E 148688
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
2.9
3.3
4.5
3.5
6.5
6
19
400
100
60
600
90
16.1
14.6
6.5
0.36
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
Applications
AC and DC motor control
AC servo and robot drives
power supplies
welding inverters
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
R
thJC
R
thJH
I
C
= 160 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 4 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
High power density
Small and light weight
Leads with expansion bend for
stress relief
V
CE
= 0 V; V
GE
= ± 20 V
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 100 A
V
GE
= 15/0 V; R
G
= 6.8
Ω
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
Caution:
These Devices are
sensitive to electrostatic discharge.
0.18 K/W
Users should observe proper ESD
K/W
handling precautions.
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSIS PSSI 160/12
Reverse diodes (FRED)
Symbol
I
F25
I
F80
Conditions
T
C
= 25°C
T
C
= 80°C
Maximum Ratings
154
97
A
A
Package style and outline
Dimensions in mm (1mm = 0.0394“)
Symbol
V
F
I
RM
t
rr
R
thJC
R
thJH
Conditions
I
F
= 100 A; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 75 A; di
F
/dt = 750 A/µs; T
VJ
= 125°C
V
R
= 600 V; V
GE
= 0 V
with heatsink compound (0.42 K/m.K; 50 µm)
Characteristic Values
min.
typ. max.
2.3
1.7
79
220
0.9
2.7
V
V
A
ns
0.45 K/W
K/W
PSIG
Temperature Sensor NTC
Symbol
R
25
B
25/50
Conditions
T = 25°C
Characteristic Values
min. typ.
max.
4.75
5.0
3375
5.25 kΩ
K
PSSI
Module
Symbol
T
VJ
T
stg
V
ISOL
M
d
a
I
ISOL
≤
1 mA; 50/60 Hz
Mounting torque (M4)
Max. allowable acceleration
Conditions
Maximum Ratings
-40...+150
-40...+150
3000
1.5 - 2.0
14 - 18
50
°C
°C
V~
Nm
lb.in.
m/s
2
Symbol
d
S
d
A
Weight
Conditions
Creepage distance on surface
(Pin to heatsink)
Strike distance in air
(Pin to heatsink)
Characteristic Values
min. typ. max.
11.2
11.2
24
mm
mm
g
PSIS
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSIS PSSI 160/12
250
A
I
C
T
J
= 25°C
250
V
GE
=17V
15V
13V
11V
A
200
I
C
150
100
T
J
= 125°C
V
GE
=17V
15V
13V
11V
200
150
100
50
0
0,0
9V
9V
50
0
0,0
156T120
156T120
0,5
1,0
1,5
2,0
2,5
V
CE
3,0
V
0,5
1,0
1,5
2,0
2,5 3,0
V
CE
3,5
V
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
250
A
V
CE
= 20V
T
J
= 25°C
300
A
250
I
F
200
150
T
J
= 125°C
T
J
= 25°C
200
I
C
150
100
50
0
156T120
100
50
0
0,5
156T120
5
6
7
8
9
10
V
GE
11
V
1,0
1,5
2,0
2,5
V
F
3,0
V
3,5
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
120
20
V
V
GE
15
300
ns
t
rr
V
CE
= 600V
I
C
= 100A
A
I
RM
t
rr
80
200
10
40
5
I
RM
T
J
= 125°C
V
R
= 600V
I
F
= 100A
100
0
156T120
0
100
200
300
400
Q
G
500
nC
0
156T120
0
200
400
600
800
A/µs
-di/dt
1000
0
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSIS PSSI 160/12
40
mJ
E
on
t
d(on)
E
on
120
ns
t
r
90
t
60
40
mJ
E
off
30
t
d(off)
E
off
V
CE
= 600V
V
GE
= ±15V
800
ns
600
t
400
30
20
V
CE
= 600V
V
GE
= ±15V
20
10
R
G
= 6.8Ω
30
T
J
= 125°C
156T120
10
R
G
= 6.8Ω
200
T
J
= 125°C
156T120
0
0
50
100
150
I
C
200
A
0
0
t
f
0
50
100
150
I
C
200 A
0
Fig. 7 Typ. turn on energy and switching
times versus collector current
50
mJ
300
ns
240
t
180
120
60
156T120
Fig. 8 Typ. turn off energy and switching
times versus collector current
25
mJ
E
off
1500
ns
1200
t
900
600
300
156T120
40
E
on
V
CE
= 600V
V
GE
= ±15V
I
C
= 100A
T
J
= 125°C
E
on
t
d(on)
t
r
20
15
10
5
0
V
CE
= 600V
V
GE
= ±15V
I
C
= 100A
T
J
= 125°C
t
d(off)
E
off
30
20
10
0
0
8
16
24
32
40
R
G
48
Ω
56
0
t
f
0
8
16
24
32
R
G
40
48
Ω
56
0
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
240
A
1
K/W
0,1
Z
thJC
R
G
= 6.8Ω
T
J
= 125°C
V
CEK
< V
CES
Fig.10 Typ. turn off energy and switching
times versus gate resistor
200
I
CM
160
120
80
40
0
156T120
0,01
0,001
0,0001
diode
IGBT
single pulse
VDI...160-12P1
0
200
400
600
800 1000 1200
V
V
CE
0,00001
0,00001 0,0001
0,001
0,01
t
0,1
s
1
Fig. 11 Reverse biased safe operating area
RBSOA
Fig. 12 Typ. transient thermal impedance
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Power technology
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