Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-0186
Features
• Cascadable 50
Ω
Gain Block
• 3 dB Bandwidth:
DC to 0.9 GHz
• High Gain:
17.5 dB Typical at 0.5 GHz
• Unconditionally Stable
(k>1)
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available
[1]
Description
The MSA-0186 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for use as a
general purpose 50
Ω
gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in commercial and
industrial applications.
86 Plastic Package
The MSA-series is fabricated using
HP’s 10 GHz f
T
, 25 GHz f
MAX
,
Note:
silicon bipolar MMIC process
1. Refer to PACKAGING section “Tape-
which uses nitride self-alignment,
and-Reel Packaging for Semiconductor
Devices”.
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R
bias
V
CC
> 7 V
RFC (Optional)
4
C
block
3
IN
1
MSA
C
block
OUT
V
d
= 5 V
2
5965-9694E
6-262
MSA-0186 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum
[1]
40 mA
200 mW
+13 dBm
150°C
–65 to 150°C
Thermal Resistance
[2,4]
:
θ
jc
= 115°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 8.7 mW/°C for T
C
> 127°C.
4. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications
[1]
, T
A
= 25°C
Symbol
G
P
∆G
P
f
3 dB
VSWR
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
Parameters and Test Conditions: I
d
= 17 mA, Z
O
= 50
Ω
Power Gain (|S
21
|
2
)
Gain Flatness
3 dB Bandwidth
Input VSWR
Output VSWR
50
Ω
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 0.1 to 3.0 GHz
f = 0.1 to 3.0 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.1 GHz
f = 0.5 GHz
f = 0.1 to 0.6 GHz
Units
dB
Min.
15.5
Typ.
18.5
17.5
±
0.7
0.9
1.3:1
1.2:1
Max.
dB
GHz
dB
dBm
dBm
psec
V
mV/°C
4.0
5.5
1.5
14.0
200
5.0
–9.0
6.0
Note:
1. The recommended operating current range for this device is 13 to 25 mA. Typical performance as a function of current
is on the following page.
Part Number Ordering Information
Part Number
MSA-0186-BLK
MSA-0186-TR1
No. of Devices
100
1000
Container
Antistatic Bag
7" Reel
For more information refer to PACKAGING section, “Tape and Reel
Packaging for Semiconductor Devices.”
6-263
MSA-0186 Typical Scattering Parameters (Z
O
= 50
Ω,
T
A
= 25°C, I
d
= 17 mA)
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
0.1
0.2
0.3
0.4
0.5
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
.05
.06
.07
.08
.08
.09
.10
.10
.07
.02
.06
.14
.23
.31
.45
148
124
103
89
76
66
50
35
12
–12
165
150
137
125
105
18.5
18.3
18.1
17.7
17.4
17.0
16.2
15.3
13.2
11.3
9.8
8.3
7.0
5.7
3.3
8.39
8.22
8.03
7.67
7.42
7.06
6.47
5.83
4.57
3.67
3.09
2.60
2.24
1.93
1.46
171
162
154
146
139
131
119
107
83
64
50
34
20
6
–17
–23.0
–22.8
–22.6
–22.2
–21.9
–21.4
–20.5
–19.6
–17.7
–16.1
–14.8
–13.9
–13.4
–13.0
–12.7
.071
.073
.074
.078
.081
.085
.094
.105
.131
.157
.182
.202
.213
.223
.231
4
9
13
14
17
21
25
29
30
27
24
19
12
5
–5
.08
.08
.07
.07
.06
.06
.07
.07
.08
.08
.08
.09
.09
.09
.09
–7
–14
–24
–31
–39
–47
–67
–89
–165
156
134
124
117
114
132
A model for this device is available in the DEVICE MODELS section.
Typical Performance, T
A
= 25°C
(unless otherwise noted)
24
Gain Flat to DC
21
20
18
25
G
p
(dB)
18
17
16
7
6
5
NF
7
6
5
4
P
1 dB
G
P
T
C
= +85°C
T
C
= +25°C
T
C
= –25°C
G
p
(dB)
12
9
6
3
0
I
d
= 13 mA
I
d
= 17 mA
I
d
= 25 mA
0.1
0.3 0.5
1.0
3.0
6.0
I
d
(mA)
15
10
4
P
1 dB
(dBm)
3
2
1
0
–25
0
+25
+55
+85
5
0
0
1
2
3
V
d
(V)
4
5
6
FREQUENCY (GHz)
TEMPERATURE (°C)
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25°C, I
d
= 17 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature, f = 0.5 GHz,
I
d
=17 mA.
6
I
d
= 20 mA
4
7.0
I
d
= 13 mA
I
d
= 17 mA
I
d
= 20 mA
6.5
P
1 dB
(dBm)
I
d
= 17 mA
NF (dB)
2
6.0
0
I
d
= 13 mA
5.5
–2
–4
0.1
5.0
0.2 0.3
0.5
1.0
2.0
4.0
0.1
0.2 0.3
0.5
1.0
2.0
4.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 5. Noise Figure vs. Frequency.
6-264
NF (dB)
15
86 Plastic Package Dimensions
0.51
±
0.13
(0.020
±
0.005)
GROUND
4
RF INPUT
1
A01
45°
RF OUTPUT
AND DC BIAS
C
L
3
2.34
±
0.38
(0.092
±
0.015)
2
GROUND
2.67
±
0.38
(0.105
±
0.15)
1.52
±
0.25
(0.060
±
0.010)
5° TYP.
0.203
±
0.051
(0.006
±
0.002)
0.66
±
0.013
(0.026
±
0.005)
0.30 MIN
(0.012 MIN)
8° MAX
0° MIN
2.16
±
0.13
(0.085
±
0.005)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
6-265
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