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HP142TS

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size139KB,2 Pages
ManufacturerHuashan ( SHEDCL )
Websitehttp://www.huashan.com.cn/
Download Datasheet View All

HP142TS Overview

Transistor

Shantou Huashan Electronic Devices Co.,Ltd.
NPN DARLINGTON TRANSISTOR
HP142TS
APPLICATIONS
High DC Current Gain
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation(T
c
=25℃)…………………… 70W
V
CBO
——Collector-Base
Voltage…………………………… 100V
V
CEO
——Collector-Emitter
Voltage………………………… 100V
V
EBO
——Emitter-Base
Voltage……………………………… 5V
I
C
——Collector
Current(DC)……………………………… 8A
I
B
——Base
Current……………………………………………0.5A
TO-220
1―
Base,B
2―Collector,C
3―Emitter, E
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter-Base Cutoff Current
Min
Typ
Max
Unit
Test Conditions
BV
CEO(SUS)
I
CEO
I
CBO
I
EBO
H
FE(1)
H
FE(2)
V
CE(sat1)
V
CE(sat2)
V
BE(
sat
)
V
BE(on)
t
D
t
R
t
S
t
F
100
2
1
2
1000
1000
2
3
3.5
3
0.15
0.55
2.5
2.5
V
mA
mA
mA
I
C
=30mA, I
B
=0
V
CE
=50V, I
B
=0
V
CB
=100V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=4V, I
C
=0.5A
V
CE
=4V, I
C
=3A
DC Current Gain
Collector- Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Base- Emitter On Voltage
Deiay time
Rise Time
Storage Time
Fall Time
V
V
V
V
uS
uS
uS
uS
I
C
=5A, I
B
=10mA
I
C
=10A, I
B
=40mA
I
C
=10A, I
B
=40mA
V
CE
=4V,I
C
=10A,
Vcc=30V,Ic=5A
I
B1=
20mA
I
B2
=-20mA
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