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HSBD136

Description
PNP SILICON TRANSISTOR
File Size118KB,1 Pages
ManufacturerHuashan ( SHEDCL )
Websitehttp://www.huashan.com.cn/
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HSBD136 Overview

PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PN P S I L I C O N T R A N S I S T O R
HSBD136
█ APPLICATIONS
Medium Power Linear switching Applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation(T
c
=25℃)…………………… 12.5W
P
C
——Collector
Dissipation(T
A
=25℃)…………………… 1.25W
V
CBO
——Collector-Base
Voltage…………………………… -45V
V
CEO
——Collector-Emitter
Voltage………………………… -45V
V
EBO
——Emitter-Base
Voltage………………………………… -5V
I
C
——Collector
Current
(Pulse)
…………………………………
-3A
I
C
——Collector
Current(DC)……………………………… -1.5A
I
B
——Base
Current……………………………………………-0.5A
1―
Emitter, E
2―Collector,C
3―Base,B
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
I
CBO
I
EBO
h
FE(1)
h
FE(2)
*h
FE(3)
*V
CE(
sat
)
*V
BE(ON)
*V
CEO(SUS)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Emitter Sustaining Voltage
-45
Characteristics
Collector Cut-off Current
Emitter-Base Cut-off Current
DC Current Gain
25
25
40
250
-0.5
-1.0
V
V
Min
Typ
Max
-0.1
-10
Unit
μA
μA
Test Conditions
V
CB
=-30V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-2V, I
C
=-5mA
V
CE
=-2V, I
C
=-0.5A
V
CE
=-2V, I
C
=-150mA
Ic=-500mA, I
B
=-50mA
Ic=-0.5A, V
CE
=-2V
Ic=-30mA,I
B
=0
*Pulse Test:PW=350 μs,Duty Cycie=2% Pulsed
█h
FE(3)
Classification
Cassification
6
40~100
10
63~160
16
100~250
h
FE(3)
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