*G Denotes RoHS Compliant, Pb Free Terminal Finish.
600V 15A
APT15D60K
APT15D60KG*
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
PRODUCT APPLICATIONS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
•
Free Wheeling Diode
-Motor Controllers
-Converters
-Inverters
•
Snubber Diode
•
PFC
(K)
PRODUCT FEATURES
•
Ultrafast Recovery Times
PRODUCT BENEFITS
•
Low Losses
1
•
Soft Recovery Characteristics
•
Low Noise Switching
•
Popular TO-220 Package or
Surface Mount D
2
PAK Pack-
age
•
Low Forward Voltage
•
Low Leakage Current
•
Cooler Operation
•
Higher Reliability Systems
•
Increased System Power
Density
1 - Cathode
2 - Anode
Back of Case - Cathode
2
1
2
MAXIMUM RATINGS
Symbol
V
R
V
RRM
V
RWM
I
F(AV)
I
F(RMS)
I
FSM
T
J
,T
STG
T
L
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
All Ratings: T
C
= 25°C unless otherwise specified.
APT15D60K(G)
UNIT
600
15
32
110
-55 to 175
300
Volts
Maximum Average Forward Current (T
C
= 133°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J
= 45°C, 8.3ms)
Operating and StorageTemperature Range
Lead Temperature for 10 Sec.
Amps
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
I
F
= 15A
V
F
Forward Voltage
I
F
= 30A
I
F
= 15A, T
J
= 125°C
I
RM
C
T
Maximum Reverse Leakage Current
Junction Capacitance, V
R
= 200V
V
R
= V
R
Rated
V
R
= V
R
Rated, T
J
= 125°C
MIN
TYP
MAX
UNIT
1.6
1.9
1.4
1.8
Volts
250
500
23
µA
pF
053-6010 Rev M 7-2015
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
I
F
= 15A, di
F
/dt = -200A/µs
V
R
= 400V, T
C
= 125°C
I
F
= 15A, di
F
/dt = -200A/µs
V
R
= 400V, T
C
= 25°C
Test Conditions
I
F
= 1A, di
F
/dt = -100A/µs, V
R
= 30V, T
J
= 25°C
MIN
-
TYP
APT15D60K(G)
MAX
UNIT
ns
nC
21
80
95
3
150
520
7
60
810
22
-
-
-
-
-
-
-
-
-
-
-
Amps
ns
nC
Amps
ns
nC
Amps
I
F
= 15A, di
F
/dt = -1000A/µs
V
R
= 400V, T
C
= 125°C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
W
T
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
Package Weight
MIN
TYP
MAX
UNIT
°C/W
oz
g
1.35
80
0.07
1.9
10
1.1
Torque
Maximum Mounting Torque
lb•in
N•m
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
1.40
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
1.20
1.00
0.80
0.60
0.40
0.20
0
10
-5
0.3
0.1
0.05
10
-4
0.9
0.7
0.5
Note:
P
DM
t1
t2
SINGLE PULSE
Duty Factor D =
1
/
t2
Peak T
J
= P
DM
x Z
θJC + T C
t
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
053-6010 Rev M 7-2015
TYPICAL PERFORMANCE CURVES
60
50
40
30
20
10
0
T
J
= 125°C
T
J
= 150°C
T
J
= -55°C
0
T
J
= 25°C
t
rr
, REVERSE RECOVERY TIME
(ns)
180
160
140
120
100
80
60
40
20
15A
30A
APT15D60K(G)
T = 125°C
J
V = 400V
R
I
F
, FORWARD CURRENT
(A)
7.5A
0.5
1
1.5
2
2.5
3
V
F
, ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
1200
Q
rr
, REVERSE RECOVERY CHARGE
(nC)
1000
800
15A
600
400
200
0
T = 125°C
J
V = 400V
R
0
200
400
600
800 1000 1200
-di
F
/dt, CURRENT RATE OF CHANGE(A/µs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
I
RRM
, REVERSE RECOVERY CURRENT
(A)
30
25
20
15
10
5
0
7.5A
15A
T = 125°C
J
V = 400V
R
0
30A
30A
7.5A
0
200
400
600
800 1000 1200
-di
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
1.2
K
f
, DYNAMIC PARAMETERS
(Normalized to 1000A/µs)
1.0
0.8
0.6
0.4
0.2
0.0
Q
rr
I
RRM
t
rr
t
rr
I
F(AV)
(A)
Q
rr
0
200
400
600
800 1000 1200
-di
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
40
35
30
25
20
15
10
5
Duty cycle = 0.5
T = 175°C
J
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
160
C
J
, JUNCTION CAPACITANCE
(pF)
140
120
100
80
0
75
100
125
150
175
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
0
25
50
40
20
10
100 200
V
R
, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
0
1
053-6010 Rev M 7-2015
60
Vr
+18V
0V
D.U.T.
30µH
di
F
/dt Adjus t
APT5018BLL
APT15D60K(G)
trr/Q rr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
I
F
- Forward Conduction Current
2
di
F
/dt - Rate of Diode Current Change Through Zero Crossing.
3
I
RRM
- Maximum Reverse Recovery Current
4
t
rr
-
Reverse Recovery Time measured from zero crossing where
Zer o
5
3
2
0.25 I RRM
1
4
diode current goes from positive to negative, to the point at
which the straight line through I
RRM
and 0.25, I
RRM
passes through zero.
5
Q
rr
- Area Under the Curve Defined by I
RRM
and t
RR.
Figure 10. Diode Reverse Recovery Waveform Definition
TO-220 (K) Package Outline
e3 100% Sn
Cathode
Cathode
053-6010 Rev M 7-2015
Anode
Dimensions in millimeters and [inches]
APT15D60K(G)
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CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used
without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with
Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by
any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or
otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This
product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or
applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or
use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any
patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customer's final application. User or
customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s re-
sponsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein
is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi
specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is
subject to other terms and conditions which can be located on the web at http://www.microsemi.com/terms-a-conditions.
053-6010 Rev M 7-2015
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