APT40GL120JU3
ISOTOP
®
Buck chopper
Trench + Field Stop IGBT4
Power module
C
V
CES
= 1200V
I
C
= 40A @ Tc = 80°C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Trench + Field Stop IGBT 4 Technology
- Low voltage drop
- Low leakage current
- Low switching losses
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
ISOTOP
®
Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Low conduction losses
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
C
of V
CEsat
RoHS Compliant
G
E
A
E
G
C
A
ISOTOP
Absolute maximum ratings
Symbol
V
CES
I
C
I
CM
V
GE
P
D
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 150°C
Max ratings
1200
65
40
70
±20
220
70A @ 1100V
Unit
V
A
V
W
October, 2012
1-6
APT40GL120JU3 – Rev 1
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
APT40GL120JU3
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
I
CES
V
CE(sat)
V
GE(th)
I
GES
Zero Gate Voltage Collector Current
Collector Emitter saturation Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
V
GE
= 0V, V
CE
= 1200V
T
j
= 25°C
V
GE
= 15V
I
C
= 35A
T
j
= 150°C
V
GE
= V
CE
, I
C
= 1.2mA
V
GE
= 20V, V
CE
= 0V
Min
Typ
1.85
2.25
5.8
Max
250
2.25
6.5
400
Unit
µA
V
V
nA
5.0
Dynamic Characteristics
Symbol Characteristic
C
ies
C
oes
C
res
Q
G
T
d(on)
T
r
T
d(off)
T
f
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
I
sc
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Short Circuit data
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
V
GE
= ±15V ; V
CE
=600V
I
C
=35A
Inductive Switching (25°C)
V
GE
= ±15V
V
CE
= 600V
I
C
= 35A
R
G
= 12
Inductive Switching (150°C)
V
GE
= ±15V
V
CE
= 600V
I
C
= 35A
R
G
= 12
T
J
= 25°C
V
GE
= ±15V
V
CE
= 600V
T
J
= 150°C
I
C
= 35A
T
J
= 25°C
R
G
= 12
T
J
= 150°C
V
GE
≤15V
; V
Bus
= 900V
t
p
≤10µs
; T
j
= 150°C
Min
Typ
1950
155
115
0.27
130
20
300
45
150
35
350
80
2.6
4
2
3
140
ns
Max
Unit
pF
µC
ns
mJ
mJ
A
Chopper diode ratings and characteristics
Symbol Characteristic
V
RRM
I
RM
I
F
V
F
t
rr
Q
rr
Maximum Peak Repetitive Reverse Voltage
Test Conditions
T
j
= 25°C
T
j
= 150°C
Tc = 80°C
I
F
= 30A
I
F
= 60A
I
F
= 30A
I
F
= 30A
V
R
= 800V
Min
1200
Typ
Max
100
500
Unit
V
µA
A
V
ns
nC
October, 2012
2-6
APT40GL120JU3 – Rev 1
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
R
=1200V
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
30
2.6
3.2
1.8
300
380
360
1700
3.1
di/dt =200A/µs
www.microsemi.com
APT40GL120JU3
Thermal and package characteristics
Symbol Characteristic
R
thJC
R
thJA
V
ISOL
T
J
,T
STG
T
L
Torque
Wt
Junction to Case Thermal Resistance
Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Min
IGBT
Diode
2500
-55
Typ
Max
0.68
1.2
20
175
300
1.5
Unit
°C/W
V
°C
N.m
g
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque
(Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Package Weight
29.2
SOT-227 (ISOTOP
®
) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
1.95 (.077)
2.14 (.084)
Anode
Collector
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
Emitter
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a registered trademark of ST Microelectronics NV
www.microsemi.com
3-6
APT40GL120JU3 – Rev 1
October, 2012
APT40GL120JU3
Typical Performance Curve
70
60
50
I
C
(A)
40
30
20
10
0
0
1
2
V
CE
(V)
3
4
T
J
=25°C
T
J
=150°C
Output Characteristics (V
GE
=15V)
Output Characteristics
70
60
50
I
C
(A)
40
30
20
10
0
0
1
2
V
CE
(V)
Energy losses vs Collector Current
V
CE
= 600V
V
GE
= 15V
R
G
=12
Ω
T
J
= 150°C
V
GE
=9V
T
J
= 150°C
V
GE
=19V
V
GE
=15V
3
4
70
60
50
I
C
(A)
40
30
20
10
0
5
6
Transfert Characteristics
T
J
=25°C
12
10
8
E (mJ)
6
4
Eon
Eoff
T
J
=150°C
2
0
7
8
9
V
GE
(V)
10
11
12
13
0
10
20
30
40
50
60
70
I
C
(A)
Reverse Bias Safe Operating Area
80
70
Eon
Switching Energy Losses vs Gate Resistance
10
8
E (mJ)
6
4
2
0
0
10
20
30
40
Gate Resistance (ohms)
50
V
CE
= 600V
V
GE
=15V
I
C
= 35A
T
J
= 150°C
60
I
C
(A)
50
40
30
20
10
0
0
300
600
900
V
CE
(V)
1200
1500
V
GE
=15V
T
J
=150°C
R
G
=12
Ω
Eoff
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.7
Thermal Impedance (°C/W)
0.6
0.5
0.4
0.3
0.2
0.1
0.1
0.05
Single Pulse
0.9
IGBT
0.5
0.3
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
www.microsemi.com
4-6
APT40GL120JU3 – Rev 1
October, 2012
0.7
APT40GL120JU3
Operating Frequency vs Collector Current
Fmax, Operating Frequency (kHz)
160
ZVS
V
CE
=600V
D=50%
R
G
=12
Ω
T
J
=150°C
Tc=75°C
Forward Characteristic of diode
80
70
60
I
F
(A)
50
40
30
T
J
=25°C
T
J
=125°C
120
80
40
Hard
switching
ZCS
20
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
0
10
20
30
40
I
C
(A)
50
60
70
V
F
(V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.4
Thermal Impedance (°C/W)
1.2
1
0.8
0.6
0.4
0.2
0
0.00001
0.3
0.1
0.05
Single Pulse
0.9
0.7
0.5
Diode
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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5-6
APT40GL120JU3 – Rev 1
October, 2012
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