Shantou Huashan Electronic Devices Co.,Ltd.
N PN S I L I C O N T R A N S I S T O R
KSH13007
█ ＨＩＧＨ ＶＯＬＴＡＧＥ ＳＷＩＴＣＨ ＭＯＤＥ ＡＰＰＬＩＣＡＴＩＯＮ
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature…………………………
－55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation（T
c
=25℃）…………………… 80W
V
CBO
——Collector-Base
Voltage…………………………… 700V
V
CEO
——Collector-Emitter
Voltage………………………… 400V
V
EBO
——Emitter-Base
Voltage……………………………… 9V
I
C
——Collector
Current（DC）……………………………… 8A
I
C
——Collector
Current（Pulse）…………………………… 16A
I
B
——Base
Current……………………………………………4A
TO-220
1―
Base，B
2―Collector，C
3―Emitter, E
█ 电参数
（T
a
=25℃）
Symbol
Characteristics
Collector-Emitter Sustaining Voltage
Emitter-Base Cutoff Current
Min
Typ
Max
Unit
Test Conditions
BV
CEO
I
EBO
H
FE（1）
H
FE（2）
４００
１０
５
１１０
１
４０
３０
１
２
３
１．２
１．６
１．６
３
０．７
Ｖ
½Ａ
Ｖ
Ｖ
Ｖ
Ｖ
Ｖ
½Ｆ
½Ｓ
½Ｓ
½Ｓ
I
C
=10mA, I
B
=0
V
EB
=9V, I
C
=0
V
CE
=5V, I
C
=2A
V
CE
=5V, I
C
=5A
I
C
=2A, I
B
=400mA
I
C
=5A, I
B
=1A
I
C
=8A, I
B
=2A
I
C
=2A, I
B
=0.4A
I
C
=5A, I
B
=1A
V
CB
=10V, f=0.1MHz z
V
CE
=10V, I
C
=500mA
Vcc=125V,Ic=5A
I
B1
=I
B2
=1A
DC Current Gain
V
CE(sat1)
Collector- Emitter Saturation Voltage
V
CE(sat2)
V
CE(sat3)
V
BE(
sat1
)
V
BE(
sat2
)
Cob
f
T
t
ON
t
STG
t
F
Output Capacitance
Current Gain-Bandwidth Product
Turn On time
Storage Time
Fall Time
Base- Emitter Saturation Voltage
４
█
h
FE
Classification
H1
10—16
H2
14—21
H3
19—26
H4
24—31
H5
29—40
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EEWORLD
