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2SD2662_1

Description
Low frequency amplifier
File Size92KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet Compare View All

2SD2662_1 Overview

Low frequency amplifier

2SD2662
Transistors
Low frequency amplifier
2SD2662
Application
Low frequency amplifier
Driver
Dimensions
(Unit : mm)
Features
1) A collector current is large.
2) V
CE(sat)
350mV
At I
C
= 1A / I
B
= 50mA
ROHM : MPT3
JEITA : SC-62
JEDEC: SOT-89
(1)Base
(2)Collector
(3)Emitter
Abbreviated symbol : FZ
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
tj
tstg
Limits
30
30
6
1.5
3
500
2
∗2
150
−55
to
+150
Unit
V
V
V
A
A
∗1
mW
W
°C
°C
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
2SD2662
Taping
T100
1000
∗1
Single pulse, P
W
=1ms
∗2
Mounted on a 40×40×
t
0.7mm Ceramic substrate
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut off current
Emitter cut off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
Pulsed
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
30
30
6
270
Typ.
160
330
11
Max.
100
100
350
680
Unit
V
V
V
nA
nA
mV
MHz
pF
Conditions
I
C
=10µA
I
C
=1mA
I
E
=10µA
V
CB
=30V
V
EB
=6V
I
C
=1A,
I
B
=50mA
V
CE
=2V,
I
C
=100mA
V
CE
=2V,
I
E
=−100mA,
f=100MHz
V
CB
=10V,
I
E
=0A,
f=1MHz
Rev.B
1/2

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