2SD2662
Transistors
Low frequency amplifier
2SD2662
Application
Low frequency amplifier
Driver
Dimensions
(Unit : mm)
Features
1) A collector current is large.
2) V
CE(sat)
≦
350mV
At I
C
= 1A / I
B
= 50mA
ROHM : MPT3
JEITA : SC-62
JEDEC: SOT-89
(1)Base
(2)Collector
(3)Emitter
Abbreviated symbol : FZ
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
tj
tstg
Limits
30
30
6
1.5
3
500
2
∗2
150
−55
to
+150
Unit
V
V
V
A
A
∗1
mW
W
°C
°C
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
2SD2662
Taping
T100
1000
∗1
Single pulse, P
W
=1ms
∗2
Mounted on a 40×40×
t
0.7mm Ceramic substrate
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut off current
Emitter cut off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
∗
Pulsed
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
30
30
6
−
−
−
270
−
−
Typ.
−
−
−
−
−
160
−
330
11
Max.
−
−
−
100
100
350
680
−
−
Unit
V
V
V
nA
nA
mV
−
MHz
pF
Conditions
I
C
=10µA
I
C
=1mA
I
E
=10µA
V
CB
=30V
V
EB
=6V
I
C
=1A,
I
B
=50mA
V
CE
=2V,
I
C
=100mA
∗
V
CE
=2V,
I
E
=−100mA,
f=100MHz
∗
V
CB
=10V,
I
E
=0A,
f=1MHz
Rev.B
1/2
2SD2662
Transistors
Electrical characteristic curves
V
CE
=2V
Pulsed
DC CURRENT GAIN : h
FE
Ta=100°C
Ta=25°C
Ta=−40°C
V
CE
=2V
Pulsed
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
1
COLLECTOR CURRENT : I
C
(A)
1000
1
Ta=25°C
Pulsed
0.1
Ta=100°C
Ta=25°C
Ta=−40°C
100
0.1
0.01
I
C
/I
B
=50/1
I
C
/I
B
=20/1
I
C
/I
B
=10/1
0.001
0
0.5
1
1.5
10
0.001
0.01
0.1
1
10
0.01
0.001
0.01
0.1
1
10
BASE TO EMITTER CURRENT : V
BE
(V)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 DC current gain
vs. collector current
Fig.3 Collector-emitter saturation voltage
vs. collector current
BASE SATURATION VOLTAGE : V
BE (sat)
(V)
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
V
BE(sat)
1
Ta=−40°C
Ta=25°C
Ta=100°C
TRANSITION FREQUENCY : f
T
(MHz)
C B
=20/1
I
C
/I
B
=20
Pulsed
Ta=25°C
V
CE
=2V
f=100MHz
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
10
1000
1000
Ta
=
25°C
I
C
=
0A
f
=
1MHz
100
Cib
100
Cob
10
0.1
V
CE(sat)
Ta=100°C
Ta=25°C
Ta=−40°C
0.01
0.001
0.01
0.1
1
10
10
0.01
0.1
1
10
1
0.1
1
10
100
COLLECTOR CURRENT : I
C
(A)
EMITTER CURRENT : I
E
(A)
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.4 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
Fig.5 Gain bandwidth product
vs. emitter current
Fig.6 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
1000
tstg
Ta=25°C
V
CE
=5V
f=100MHz
SWITCHING TIME : (ns)
100
tf
tdon
10
tr
1
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
Fig.7 Switching time
Rev.B
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
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exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0
Microcontroller MCU
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