2SD2444K
Transistors
Power Transistor (15V, 1A)
2SD2444K
Features
1) Low saturation voltage, V
CE(sat)
= 0.3V (Max.)
at I
C
/ I
B
= 0.4A / 20mA.
2) I
C
= 1A
3) Complements the 2SB1590K.
External dimensions
(Unit : mm)
SMT3
2.9
0.4
(3)
1.1
0.8
0.95 0.95
0.15
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
2SD2444K
SMT3
R
BS∗
T146
3000
(1)Emitter
(2)Base
(3)Collector
1.9
Each lead has same dimensions
∗
Denotes
h
FE
Absolute maximum ratings
(Ta=25°C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
15
15
6
1
0.2
150
−55
to
+150
Unit
V
V
V
A (DC)
W
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
°C
°C
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
15
15
6
−
−
−
180
−
−
Typ.
−
−
−
−
−
−
−
200
15
Max.
−
−
−
0.5
0.5
0.3
390
−
−
Unit
V
V
V
µA
µA
V
−
MHz
pF
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=12V
V
EB
=5V
Conditions
I
C
=400mA,
I
B
=20mA
V
CE
/I
C
=2V/50mA
V
CE
=2V,
I
E
= −50mA,
f=100MHz
V
CB
=10V,
I
E
=0A,
f=1MHz
Rev.A
0.3Min.
Packaging specification and h
FE
(2)
(1)
1.6
2.8
1/2
2SD2444K
Transistors
Electrical characteristic curves
POWER DISSIPATION : P
C
/ P
C Max.
(%)
1
100
COLLECTOR CURRENT : I
C
(A)
500m
200m
100m
50m
20m
10m
5m
2m
1m
0
COLLECTOR CURRENT : I
C
(A)
Ta=25°C
V
CE
=2V
1.0
0.9
Ta=25°C
6mA
5mA
4mA
3mA
75
Ta=125
°C
25
°C
−
40
°C
10mA
0.8
9mA
8mA
0.7
7mA
0.6
0.5
0.4
0.3
0.2
0.1
0
50
2mA
25
I
B
=1mA
0
0
25
50
75
100
125
150
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
AMBIENT TEMPERATURE : Ta
(°C)
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter output
characteristics
Fig.2 Grounded emitter propagation
characteristics
Fig.3 Grounded emitter output
characteristics
500
DC CURRENT GAIN : h
FE
DC CURRENT GAIN : h
FE
V
CE
=
5V
2V
1V
500
Ta=125°C
25°C
−40°C
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
1000
Ta
=
25°C
1000
V
CE
=
2V
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
1m 2m
5m 10m 20m
Ta
=
25°C
200
100
50
200
100
50
l
C
/l
B
=50
20
10
20
20
1m
2m
5m 10m 20m 50m 100m 200m 500m 1
COLLECTOR CURRENT : l
C
(A)
1m
2m
5m 10m 20m 50m 100m 200m 500m 1
COLLECTOR CURRENT : l
C
(A)
50m 100m 200m 500m 1
COLLECTOR CURRENT : I
C
(A)
Fig.4 DC current gain vs.
collector current ( )
Fig.5 DC collector gain vs.
collector current ( )
Fig.6 Collector-emitter saturation voltage
vs. collector current ( )
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
l
C
/l
B
=20
TRANSITION FREQUENCY : f
T
(MHz)
500m
200m
100m
50m
20m
10m
5m
2m
1m
1m 2m
5m 10m 20m
50m 100m 200m 500m 1
COLLECTOR OUTPUT CAPACITANCE : C
ob
(pF)
1
1000
500
Ta
=
25°C
f
=
100MHz
V
CE
=
2V
1000
500
200
100
50
20
10
5
2
1
0.1 0.2
0.5
1
2
5
10
Ta
=
25°C
f=1MHz
l
E
=0A
Ta=125°C
25°C
−40°C
200
100
50
20
10
10m
20m
50m
100m
200m
500m
1
20
50 100
COLLECTOR CURRENT : I
C
(A)
EMITTER CURRENT : l
E
(A)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.7 Collector-emitter saturation voltage
vs. collector current ( )
Fig.8 Transition frequency vs.
emitter current
Fig.9 Collector output capacitance vs.
collector-base voltage
Rev.A
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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