Low V
CE(sat)
transistor (strobe flash)
2SD2118
Features
1) Low V
CE(sat)
.
V
CE(sat)
= 0.25V (Typ.)
(I
C
/I
B
= 4A / 0.1A)
2) Excellent DC current gain characteristics.
3) Complements the 2SB1412.
Structure
Epitaxial planar type
NPN silicon transistor
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
Dimensions
(Unit : mm)
2SD2118
∗
Denotes h
FE
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
2SD2118
P
C
Tj
Tstg
Limits
50
20
6
5
10
1
10
150
−55
to
+150
Unit
V
V
V
A(DC)
A(Pulse)
W
W(Tc=25°C)
°C
°C
∗1
Junction temperature
Storage temperature
∗1
Single pulse Pw=10ms
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗
Measured using pulse current.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
50
20
6
−
−
−
120
−
−
Typ.
−
−
−
−
−
0.3
−
150
35
Max.
−
−
−
0.5
0.5
1.0
390
−
−
Unit
V
V
V
µA
µA
V
−
MHz
pF
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=40V
V
EB
=5V
Conditions
I
C
/I
B
=4A/0.1A
V
CE
=2V,
I
C
=0.5A
V
CE
=6V,
I
E
=−50mA,
f=100MHz
V
CE
=20V,
I
E
=0A,
f=1MHz
∗
∗
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2009.11 - Rev.C
2SD2118
Packaging specifications and h
FE
Package
Code
Type
2SD2118
h
FE
QR
Basic ordering unit (pieces)
Taping
TL
2500
Data Sheet
h
FE
values are classified as follows :
Item
h
FE
Q
120 to 270
R
180 to 390
Electrical characteristic curves
COLLECTOR CURRENT : I
C
(A)
10
5
V
CE
=2V
Ta=100°C
25°C
−25°C
5
50mA
45mA
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
FE
2
1
0.5
0.2
0.1
0.05
0.02
0.01
5m
2m
1m
0
4
Ta=25°C
30mA
25mA
20mA
15mA
40mA
35mA
10mA
5000
2000
1000
500
200
100
50
20
10
Ta=25°C
V
CE
=5V
2V
1V
3
2
5mA
1
I
B
=0mA
1.6
2.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0
0.4
0.8
1.2
5
1m 2m 5m 0.010.02 0.050.1 0.2 0.5 1 2
COLLECTOR CURRENT : I
C
(A)
5 10
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics
Fig.3 DC current gain vs.
collector current (
Ι
)
5000
2000
DC CURRENT GAIN : h
FE
V
CE
=1V
DC CURRENT GAIN : h
FE
5000
2000
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
V
CE
=2V
Ta=100°C
25°C
−25°C
2
1
0.5
Ta=25°C
1000
500
200
100
50
20
10
Ta=100°C
25°C
−25°C
1000
500
200
100
50
20
10
0.2
0.1
0.05
0.02
I
C
/I
B
=50
40
30
10
5
1m 2m 5m 0.010.02 0.05 0.10.2 0.5 1 2
COLLECTOR CURRENT : I
C
(A)
5 10
5
1m 2m 5m0.010.02 0.050.10.2 0.5 1 2
COLLECTOR CURRENT : I
C
(A)
5 10
0.01
2m 5m0.010.02 0.05 0.1 0.2 0.5 1
2
5 10
COLLECTOR CURRENT : I
C
(A)
Fig.4 DC current gain vs.
collector current (
ΙΙ
)
Fig.5 DC current gain vs.
collector current (
ΙΙΙ
)
Fig.6 Collector-emitter
saturation voltage vs.
collector current (
Ι
)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
2
1
0.5
Ta=100°C
25°C
−25°C
2
1
0.5
Ta=100°C
25°C
−25°C
l
C
/l
B
=10
l
C
/l
B
=30
2
1
0.5
0.2
0.1
0.05
0.02
Ta=100°C
25°C
−25°C
l
C
/l
B
=40
0.2
0.1
0.05
0.2
0.1
0.05
0.02
0.02
0.01
2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2
COLLECTOR CURRENT : I
C
(A)
5 10
0.01
2m 5m0.010.02 0.05 0.1 0.2 0.5 1 2
COLLECTOR CURRENT : I
C
(A)
5 10
0.01
2m 5m0.010.02 0.05 0.1 0.2 0.5 1 2
COLLECTOR CURRENT : I
C
(A)
5
10
Fig.7 Collector-emitter
saturation voltage vs.
collector current (
ΙΙ
)
Fig.8 Collector-emitter
saturation voltage vs.
collector current (
ΙΙΙ
)
Fig.9 Collector-emitter
saturation voltage vs.
collector current (IV)
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2009.11 - Rev.C
2SD2118
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE
: Cib (pF)
Data Sheet
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
2
1
0.5
Ta=100°C
25°C
−25°C
TRANSITION FREQUENCY : f
T
(MHz)
l
C
/l
B
=50
1000
500
200
100
50
20
10
5
2
Ta=25°C
V
CE
=6V
1000
500
Ta=25°C
f=1MHz
I
C
=0A
I
E
=0A
Cib
200
100
50
0.2
0.1
0.05
0.02
Cob
20
10
0.1 0.2
0.01
2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2
COLLECTOR CURRENT : I
C
(A)
5
10
1
−1m −2m −5m−10m−20m −50m−0.1 −0.2 −0.5 −1
EMITTER CURRENT : I
E
(A)
0.5
1
2
5
10
20
50
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
Fig.10 Collector-emitter
saturation voltage vs.
collector current (V)
Fig.11 Gain bandwidth product vs.
emitter current
Fig.12 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
50
Ta=25 (°C)
Single pulse
Ic max (Pulse)
COLLECTOR CURRENT : I
C
(A)
20
10
5
2
1
500m
200m
100m
50m
20m
10m
=
Pw
Ic max (Pulse)
ms
10
ms
00
=
1
5 10 20 50 100 200 500
Pw
0.2 0.5 1
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.13 Safe operating area
(2SD2118)
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D
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2009.11 - Rev.C
Notice
Notes
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
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