High-performance Regulator IC Series for PCs
Ultra Low Dropout
Linear Regulators for PC Chipsets
BD3508MUV, BD3509MUV
No.09030EAT22
●
Description
The BD3508MUV / BD3509MUV ultra low-dropout linear chipset regulator operates from a very low input supply, and offers
ideal performance in low input voltage to low output voltage applications. It incorporates a built-in N-MOSFET power
transistor to minimize the input-to-output voltage differential to the ON resistance (R
ON MAX
=100mΩ/50mΩ) level. By
lowering the dropout voltage in this way, the regulator realizes high current output (Iomax=3.0A/4.0A) with reduced
conversion loss, and thereby obviates the switching regulator and its power transistor, choke coil, and rectifier diode. Thus,
the BD3508MUV / BD3509MUV are designed to enable significant package profile downsizing and cost reduction. An
external resistor allows the entire range of output voltage configurations between 0.65 and 2.7V, while the NRCS (soft start)
function enables a controlled output voltage ramp-up, which can be programmed to whatever power supply sequence is
required.
●
Features
1) Internal high-precision reference voltage circuit (0.65V±1%)
2) Built-in VCC under voltage lock out circuit (VCC=3.80V)
3) NRCS (soft start) function reduces the magnitude of in-rush current
4) Internal Nch MOSFET driver offers low ON resistance (65mΩ/28mΩ typ)
5) Built-in current limit circuit (3.0A/4.0A min)
6) Built-in thermal shutdown (TSD) circuit
7) Variable output (0.65½2.7V)
8) Incorporates high-power VQFN020V4040 package: 4.0×4.0×1.0(mm)
9) Tracking function
●
Applications
Notebook computers, Desktop computers, LCD-TV, DVD, Digital appliances
●
Model Lineup
Maximum output current
3A
4A
Package
VQFN020V4040
VCC=5V
BD3508MUV
BD3509MUV
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2009 ROHM Co., Ltd. All rights reserved.
1/20
2009.05 - Rev.A
BD3508MUV, BD3509MUV
●Absolute
Maximum Ratings (Ta=100℃)
BD3508MUV / BD3509MUV
Limit
BD3508MUV
BD3509MUV
6.0 *
1
6.0 *
1
-
6.0*
1
6.0
-
6.0
*2
0.34
0.70
*3
1.21
*4
3.56
*5
-10½+100
-55½+125
+150
Technical Note
Parameter
Input Voltage 1
Input Voltage 2
Input Voltage 3
Enable Input Voltage
Power Good Input Voltage
Power Dissipation 1
Power Dissipation 2
Power Dissipation 3
Power Dissipation 4
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
Symbol
VCC
VIN
VDD
Ven
V
PGOOD
Pd1
Pd2
Pd3
Pd4
Topr
Tstg
Tjmax
Unit
V
V
V
V
V
W
W
W
W
℃
℃
℃
*
1
Should not exceed Pd.
*
2
Reduced by 4mW/℃ for each increase in Ta≧25℃(no heat sink)
*
3
1 layer, mounted on a board 74.2mm×74.2mm×1.6mm Glass-epoxy PCB (Copper foil area : 10.29mm
2
)
*
4
4 layers, mounted on a board 74.2mm×74.2mm×1.6mm Glass-epoxy PCB (Copper foil area : 10.29mm
2
) , copper foil in each layers.
*
5
4 layers, mounted on a board 74.2mm×74.2mm×1.6mm Glass-epoxy PCB (Copper foil area : 5505mm
2
) , copper foil in each layers.
●Operating
Conditions(Ta=25℃)
Parameter
Input Voltage 1
Input Voltage 2
Input Voltage 3
Output Voltage setting Range
Enable Input Voltage
NRCS capacity
Symbol
VCC
VIN
VDD
Vo
Ven
CNRCS
BD3508MUV
Min
Max
4.3
5.5
0.75
VCC-1 *
6
-
-
VFB
2.7
-0.3
5.5
0.001
1
BD3509MUV
Min
Max
4.3
5.5
0.7
VCC-1 *
6
2.7
5.5
VFB
2.7
-0.3
5.5
0.001
1
Unit
V
V
V
V
V
uF
*
6
VCC and VIN do not have to be implemented in the order listed.
★This
product is not designed for use in radioactive environments.
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2009 ROHM Co., Ltd. All rights reserved.
2/20
2009.05 - Rev.A
BD3508MUV, BD3509MUV
Technical Note
●Electrical
Characteristics
(Unless otherwise specified, Ta=25℃ VCC=5V Ven=3V VIN=1.8V VDD=3.3V R1=3.9KΩ R2=3.3KΩ)
◎BD3508MUV
Limit
Parameter
Symbol
Unit
Condition
Min.
Typ.
Max.
Bias Current
ICC
-
0.7
1.4
mA
VCC Shutdown Mode Current
IST
-
0
10
uA
Ven=0V
Output Voltage
Vo
-
1.200
-
V
Maximum Output Current
Io
3.0
-
-
A
Output Short Circuit Current
Iost
3.0
-
-
A
Vo=0V
Output Voltage Temperature
Tcvo
-
0.01
-
%/℃
Coefficient
Feedback Voltage 1
VFB1
0.643
0.650
0.657
V
Io=0 to 3A
Feedback Voltage 2
VFB2
0.630
0.650
0.670
V
7
Tj=-10 to 100℃ *
Line Regulation 1
Reg.l1
-
0.1
0.5
%/V
VCC=4.3V to 5.5V
Line Regulation 2
Reg.l2
-
0.1
0.5
%/V
VIN=1.2V to 3.3V
Load Regulation
Reg.L
-
0.5
10
mV
Io=0 to 3A
Minimum Input-Output Voltage
Io=1A,VIN=1.2V
dVo
-
65
100
mV
7
Differential
Tj=-10 to 100℃ *
Standby Discharge Current
Iden
1
-
-
mA
Ven=0V, Vo=1V
[ENABLE]
Enable Pin
Enhi
2
-
-
V
Input Voltage High
Enable Pin
Enlow
-0.2
-
0.8
V
Input Voltage Low
Enable Input Bias Current
Ien
-
7
10
uA
Ven=3V
[FEEDBACK]
Feedback Pin Bias Current
IFB
-100
0
100
nA
[NRCS]
NRCS Charge Current
Inrcs
14
20
26
uA
Vnrcs=0.5V
NRCS Standby Voltage
VSTB
-
0
50
mV
Ven=0V
[UVLO]
VCC Under voltage Lock out
VccUVLO
3.5
3.8
4.1
V
VCC:Sweep-up
Threshold Voltage
VCC Under voltage Lock out
Vcchys
100
160
220
mV
VCC:Sweep-down
Hysteresis Voltage
[AMP]
Gate Source Current
Gate Sink Current
*7 Design Guarantee
I
GSO
I
GSI
-
-
1.6
4.7
-
-
mA
mA
V
FB
=0, V
GATE
=2.5V
V
FB
=VCC, V
GATE
=2.5V
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2009 ROHM Co., Ltd. All rights reserved.
3/20
2009.05 - Rev.A
BD3508MUV, BD3509MUV
Technical Note
●Electrical
Characteristics
(Unless otherwise specified, Ta=25℃ VCC=5V Ven=3V VIN=1.5V VDD=3.3V R1=3.9KΩ R2=3.6KΩ)
◎BD3509MUV
Limit
Parameter
Symbol
Unit
Condition
Min.
Typ.
Max.
Bias Current
ICC
-
1.1
2.0
mA
VCC Shutdown Mode Current
IST
-
0
10
uA
Ven=0V
Output Voltage
Vo
-
1.25
-
V
Maximum Output Current
Io
4.0
-
-
A
Output Voltage Temperature
Tcvo
-
0.01
-
%/℃
Coefficient
Feedback Voltage 1
VFB1
0.643
0.650
0.657
V
Io=0 to 4A
Feedback Voltage 2
VFB2
0.637
0.650
0.663
V
Tj=-10 to 100℃ *
7
Line Regulation 1
Reg.l1
-
0.1
0.5
%/V
VCC=4.3V to 5.5V
Line Regulation 2
Reg.l2
-
0.1
0.5
%/V
VIN=1.2V to 3.3V
Load Regulation
Reg.L
-
0.5
10
mV
Io=0 to 4A
Minimum Input-Output Voltage
Io=1A,VIN=1.25V
dVo
-
28
50
mV
Differential
Tj=-10 to 100℃ *
7
Standby Discharge Current
Iden
1
-
-
mA
Ven=0V, Vo=1V
[ENABLE]
Enable Pin
Enhi
2
-
-
V
Input Voltage High
Enable Pin
Enlow
-0.2
-
0.8
V
Input Voltage Low
Enable Input Bias Current
Ien
-
7
10
uA
Ven=3V
[FEEDBACK]
Feedback Pin Bias Current
IFB
-100
0
100
nA
[NRCS]
NRCS Charge Current
Inrcs
14
20
26
uA
Vnrcs=0.5V
NRCS Standby Voltage
VSTB
-
0
50
mV
Ven=0V
[UVLO]
VCC Under voltage Lock out
VccUVLO
3.5
3.8
4.1
V
VCC:Sweep-up
Threshold Voltage
VCC Under voltage Lock out
Vcchys
100
160
220
mV
VCC:Sweep-down
Hysteresis Voltage
[AMP]
Gate Source Current
Gate Sink Current
[PGOOD Block]
Threshold voltage
Ron
*7 Design Guarantee
I
GSO
I
GSI
V
THPG
R
PG
-
-
-
-
10
18
0.585
0.1
-
-
-
-
mA
mA
V
kΩ
V
FB
=0, V
GATE
=2.5V
V
FB
=VCC, V
GATE
=2.5V
FB voltage
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2009.05 - Rev.A
BD3508MUV, BD3509MUV
●Reference
Data
BD3508MUV
Technical Note
Vo
50mV/div
45mV
Vo
50mV/div
64mV
Vo
100mV/div
91mV
Io
2A/div
3.0A
Io
2A/div
3.0A
Io
2A/div
3A
Io=0A→3A/3μsec
t(5μsec/div)
Io=0A→3A/3μsec
t(5μsec/div)
Io=0A→3A/3μsec
t(5μsec/div)
Fig.1 Transient Response
(0→3A)
Co=150μF×2, C
FB
=0.01uF
Vo
50mV/div
Vo
50mV/div
Fig.2 Transient Response
(0→3A)
Co=150μF
Vo
100mV/div
Fig.3 Transient Response
(0→3A)
Co=47μF, C
FB
=0.01uF
55mV
79mV
87mV
Io
2A/div
3.0A
Io
2A/div
3.0A
Io
2A/div
3A
Io=3A→0A/3μsec
t(5μsec/div)
Io=3A→0A/3μsec
t(5μsec/div)
Io=3A→0A/3μsec
t(5μsec/div)
Fig.4 Transient Response
(3→0A)
Co=150μF×2
Fig.5 Transient Response
(3→0A)
Co=150μF
Fig.6 Transient Response
(3→0A)
Co=47μF
Ven
2V/div
Ven
2V/div
VCC
Ven
VNRCS
2V/div
Vo
1V/div
t(200μsec/div)
VNRCS
2V/div
VIN
Vo
1V/div
t(2msec/div)
Vo
VCC→VIN→Ven
Fig.7: Waveform at output start
Fig.8 Waveform at output OFF
Fig.9 Input sequence
VCC
VCC
VCC
Ven
Ven
Ven
VIN
Vo
VIN→VCC→Ven
VIN
Vo
Ven→VCC→VIN
VIN
Vo
VCC→Ven→VIN
Fig.10 Input sequence
Fig.11 Input sequence
Fig.12 Input sequence
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2009.05 - Rev.A