Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol
V
CES
I
C
I
CM
V
GE
P
D
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
Max ratings
1700
45
30
70
±20
210
60A@1600V
Unit
V
August, 2007
1–5
APTGT30SK170T1G – Rev 0
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
APTGT30SK170T1G
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
I
CES
V
CE(sat)
V
GE(th)
I
GES
Zero Gate Voltage Collector Current
Collector Emitter saturation Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
V
GE
= 0V, V
CE
= 1700V
T
j
= 25°C
V
GE
= 15V
I
C
= 30A
T
j
= 125°C
V
GE
= V
CE
, I
C
= 1.5mA
V
GE
= 20V, V
CE
= 0V
Min
Typ
2.0
2.4
5.8
Max
250
2.4
6.4
600
Unit
µA
V
V
nA
5.2
Dynamic Characteristics
Symbol
C
ies
C
res
T
d(on)
T
r
T
d(off)
T
f
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
Characteristic
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Test Conditions
V
GE
= 0V, V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 900V
I
C
= 30A
R
G
= 18Ω
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 900V
I
C
= 30A
R
G
= 18Ω
V
GE
= ±15V
T
j
= 125°C
V
Bus
= 900V
I
C
= 30A
T
j
= 125°C
R
G
= 18Ω
Min
Typ
2500
90
100
70
650
80
100
70
750
100
17
mJ
15
Max
Unit
pF
ns
ns
Chopper diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
I
RM
I
F
V
F
t
rr
Q
rr
E
r
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
I
F
= 50A
V
R
= 900V
di/dt =800A/µs
I
F
= 50A
V
GE
= 0V
Test Conditions
V
R
=1700V
T
j
= 25°C
T
j
= 125°C
T
C
=80°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
Min
1700
Typ
Max
250
500
50
1.8
1.9
385
490
14
23
6
12
2.2
Unit
V
µA
A
V
ns
µC
mJ
August, 2007
2–5
APTGT30SK170T1G – Rev 0
www.microsemi.com
APTGT30SK170T1G
Thermal and package characteristics
Symbol Characteristic
R
thJC
V
ISOL
T
J
T
STG
T
C
Torque
Wt
Junction to Case Thermal Resistance
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
IGBT
Diode
3500
-40
-40
-40
2.5
Min
Typ
Max
0.60
0.70
150
125
100
4.7
80
Unit
°C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V
°C
N.m
g
To heatsink
M4
Temperature sensor NTC
(see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R
25
Resistance @ 25°C
B
25/85
T
25
= 298.15 K
R
T
=
R
25
1
exp
B
25 / 85
T
−
T
25
T: Thermistor temperature
1
R
T
: Thermistor value at T
Min
Typ
50
3952
Max
Unit
kΩ
K
SP1 Package outline
(dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
www.microsemi.com
3–5
APTGT30SK170T1G – Rev 0
August, 2007
APTGT30SK170T1G
Typical Performance Curve
Output Characteristics (V
GE
=15V)
Output Characteristics
60
50
40
I
C
(A)
T
J
=125°C
V
GE
=15V
60
50
I
C
(A)
T
J
=25°C
T
J
= 125°C
V
GE
=19V
40
30
20
10
0
0
0.5
1
1.5
2 2.5
V
CE
(V)
3
3.5
4
30
20
10
0
0
1
2
V
GE
=13V
V
GE
=9V
3
V
CE
(V)
4
5
60
50
40
Transfert Characteristics
40
T
J
=25°C
Energy losses vs Collector Current
35
30
E (mJ)
25
20
15
10
5
0
Er
V
CE
= 900V
V
GE
= 15V
R
G
= 18
Ω
T
J
= 125°C
Eon
Eoff
I
C
(A)
30
20
10
0
5
6
7
8
V
GE
(V)
9
T
J
=125°C
T
J
=125°C
10
11
0
20
40
I
C
(A)
60
80
100
Switching Energy Losses vs Gate Resistance
80
V
CE
= 900V
V
GE
=15V
I
C
= 30A
T
J
= 125°C
Eon
Reverse Bias Safe Operating Area
70
60
50
I
C
(A)
40
30
20
10
0
0
V
GE
=15V
T
J
=125°C
R
G
=18
Ω
60
E (mJ)
40
Eoff
20
Er
0
0
20
40
60
80
100
Gate Resistance (ohms)
120
400
800
1200
1600
V
CE
(V)
0.7
Thermal Impedance (°C/W)
0.6
0.5
0.4
0.3
0.2
0.1
0
0.00001
0.5
0.3
0.1
0.05
0.9
0.7
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
IGBT
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
www.microsemi.com
4–5
APTGT30SK170T1G – Rev 0
August, 2007
APTGT30SK170T1G
Operating Frequency vs Collector Current
Fmax, Operating Frequency (kHz)
45
40
35
30
25
20
15
10
5
0
0
10
20
30
I
C
(A)
40
50
60
0
0
0.5
1
1.5
V
F
(V)
2
2.5
3
ZCS
hard
switching
ZVS
V
CE
=900V
D=50%
R
G
=18
Ω
T
J
=125°C
T
C
=75°C
Forward Characteristic of diode
100
80
60
T
J
=125°C
T
J
=25°C
I
F
(A)
40
20
T
J
=125°C
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.8
Thermal Impedance (°C/W)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.7
0.5
0.3
0.1
0.05
0.0001
Single Pulse
0.001
0.01
0.1
1
10
0.9
Diode
0
0.00001
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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