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APTM50HM35FG

Description
Full - Bridge MOSFET Power Module
CategoryDiscrete semiconductor    The transistor   
File Size568KB,7 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
Download Datasheet Parametric View All

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APTM50HM35FG Overview

Full - Bridge MOSFET Power Module

APTM50HM35FG Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicrosemi
package instructionFLANGE MOUNT, R-XUFM-X12
Contacts12
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)3000 mJ
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)99 A
Maximum drain-source on-resistance0.039 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XUFM-X12
JESD-609 codee1
Humidity sensitivity level1
Number of components4
Number of terminals12
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)396 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
APTM50HM35FG
Full - Bridge
MOSFET Power Module
VBUS
Q1
Q3
V
DSS
= 500V
R
DSon
= 35m typ @ Tj = 25°C
I
D
= 99A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
G1
OUT1
OUT2
G3
S1
Q2
S3
Q4
Features
Power MOS 7
®
FREDFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
G2
G4
S2
0/VBUS
S4
Benefits
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
R
DSon
P
D
I
AR
E
AR
E
AS
Parameter
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
Max ratings
500
99
74
396
±30
39
781
51
50
3000
Unit
V
A
V
m
W
A
mJ
T
c
= 25°C
T
c
= 80°C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–7
APTM50HM35FG– Rev 3 October, 2012
T
c
= 25°C
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