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GC4272

Description
TM CONTROL DEVICES - HIGH SPEED PIN DIODES
File Size143KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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GC4272 Overview

TM CONTROL DEVICES - HIGH SPEED PIN DIODES

GC4210 – GC4275
TM
®
CONTROL DEVICES – HIGH SPEED PIN DIODES
RoHS Compliant
DESCRIPTION
The GC4200 series are high speed (cathode base) PIN diodes
made with high resistivity epitaxial silicon material. These diodes
are passivated with silicon dioxide for high stability and reliability
and have been proven by thousands of device hours in high
reliability systems.
These devices can withstand storage temperatures from -65°C to
+200°C and will operate over the range from -55°C to +150°C. All
devices meet or exceed military environmental specifications of
MIL-PRF-19500. The GC4200 series will operate with as little as
+10 mA forward bias.
This series of diodes meets RoHS requirements per EU Directive
2002/95/EC. The standard terminal finish is gold unless otherwise
specified. Consult the factory if you have special requirements.
APPLICATIONS
2B
KEY FEATURES
Available as packaged devices or
as chips for hybrid applications
Low Loss
Suitable for application to 18Ghz
High Speed
Low Insertion Loss
High Isolation
RoHS Compliant
1
1
www.MICROSEMI.com
Most of our devices are supplied with
Gold plated terminations. Other terminal
finishes are available on request. Consult
factory for details.
The GC4200 series can be used in RF circuits as an on/off element,
as a switch, or as a current controlled resistor in attenuators
extending over the frequency range from UHF through Ku band.
Switch applications include high speed switches (ECM systems), TR
switches, channel or antenna selection switches
(telecommunications), duplexers (radar) and digital phase shifters
(phased arrays).
The GC4200 series are also used as passive and active limiters for
low to moderate RF power levels.
Attenuator type applications include amplitude modulators, AGC
attenuators, power levelers and level set attenuators.
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
3B
APPLICATIONS/BENEFITS
RF / Microwave Switching
Duplexers
Digital Phase Shifting
Phase Array Radar
Rating
Maximum Leakage Current
@80% of Minimum Rated V
B
Storage Temperature
Operating Temperature
Symbol
I
R
T
STG
T
OP
Value
0.5
-65 to +200
-55 to +150
Unit
uA
GC4210-GC4275
GC4210-GC4275
ºC
ºC
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website
:
www.MICROSEMI.com
HU
UH
Specifications are subject to change, consult factory for the latest information.
These devices are ESD sensitive and must be handled use using ESD precautions.
Copyright
2006
Rev.: 2009-02-19
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
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