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GC4511

Description
100 V, SILICON, PIN DIODE
CategoryDiscrete semiconductor    diode   
File Size162KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

GC4511 Overview

100 V, SILICON, PIN DIODE

GC4511 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationATTENUATOR; SWITCHING
Minimum breakdown voltage100 V
ConfigurationSINGLE
Maximum diode capacitance0.25 pF
Diode component materialsSILICON
Maximum diode forward resistance0.6 Ω
Diode typePIN DIODE
frequency bandULTRA HIGH FREQUENCY TO KU BAND
JESD-30 codeO-CEMW-N2
JESD-609 codee0
Minority carrier nominal lifetime0.2 µs
Number of components1
Number of terminals2
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formMICROWAVE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
GuidelineMIL-19500
surface mountYES
technologyNEGATIVE-INTRINSIC-POSITIVE
Terminal surfaceTIN LEAD
Terminal formNO LEAD
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
GC4510 – GC4533
TM
®
CONTROL DEVICES
High Voltage NIP Diodes
RoHS Compliant
DESCRIPTION
The GC4500 series are high voltage, high power (anode base) NIP diodes.
These high resistivity silicon devices are passivated with silicon dioxide for
high stability and reliability and have been proven by thousands of device
hours in high reliability systems.
These devices can withstand storage temperatures from -65°C to +200°C
and will operate over the range from -55° to +150°C. All devices meet or
exceed military environmental specifications of MIL-PRF-19500.
The NIP diode is used when negative bias current is available for forward
conduction and will operate typically with -50 mA bias. Breakdown voltages
are available up to 500 volts. (Higher voltages available on request. Consult
factory for details.) These diodes have somewhat faster speeds as compared
with similar PIN diodes.
This series of diodes meets RoHS requirements per EU Directive
2002/95/EC. The standard terminal finish is gold unless otherwise specified.
Consult the factory if you have special requirements.
KEY FEATURES
Available as packaged devices or
as chips for hybrid applications
High power handling
Suitable for applications to 18Ghz
Low Loss
Low Distortion
RoHS Compliant
1
www.MICROSEMI.com
1 Products are supplied with a Gold finish and are
suitable for RoHS complaint assembly. Consult factory
for details.
APPLICATIONS
2B
The GC4500 series can be used in RF circuits as an on/off element, as a
switch or as a current controlled resistor in attenuators extending over the
frequency range from UHF through Ku band.
Switch applications include medium high power switches (ECM systems), TR
or
lobing
switches,
channel
or
antenna
selection
switches
(telecommunications), duplexers (radar) and digital phase shifters (phase
arrays).
The GC4500 series are also used as active limiters for low to moderate RF
power levels. Attenuator type applications include amplitude modulators,
AGC attenuators, power levelers and level set attenuators.
APPLICATIONS/BENEFITS
TR Switches
Antenna Selector Switches
Duplexers
Digital Phase Shifters
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
3B
Rating
Maximum Leakage Current
@80% of Minimum Rated V
B
Storage Temperature
Operating Temperature
Symbol
I
R
T
STG
T
OP
Value
0.5
-65 to +200
-55 to +150
Unit
uA
GC4510-GC4533
GC4510-GC4533
ºC
ºC
For the most current data, consult our website:
www.MICROSEMI.com
HU
U
Specifications are subject to change, consult factory for further information.
These devices are ESD sensitive and must be handled using ESD precautions.
Copyright
2006
Rev.: 2009-01-19
Microsemi
Microwave Products
Page 1
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
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