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GMV2134-GM1

Description
C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
CategoryDiscrete semiconductor    diode   
File Size122KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
Download Datasheet Parametric Compare View All

GMV2134-GM1 Overview

C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE

GMV2134-GM1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrosemi
package instructionR-PDSO-N2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW INDUCTANCE, LOW NOISE
Minimum breakdown voltage22 V
ConfigurationSINGLE
Minimum diode capacitance ratio3.7
Nominal diode capacitance4.9 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandC BAND
JESD-30 codeR-PDSO-N2
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
minimum quality factor750
Maximum repetitive peak reverse voltage22 V
surface mountYES
Terminal formNO LEAD
Terminal locationDUAL
Varactor Diode ClassificationHYPERABRUPT
GMV1000 / GMV2100 / GMV5000
TM
®
GigaMite
Surface Mount Varactor Diodes
RoHS Compliant
DESCRIPTION
This series of surface mount diodes are specifically design for high
volume surface mount applications. The GigaMite design is
optimized for improved electrical and thermal performance over
standard plastic package technology. Our patented dual orthogonal
lead frame provides both exceptionally low thermal impedance and
series inductance. Microsemi utilizes only the highest quality
dielectric materials resulting in low loss tangent and physical
stability even in harsh environments. The result is higher frequency
coverage and greater stability than comparable plastic packages.
This series of devices meets RoHS requirements per EU Directive
2002/95/EC.
KEY FEATURES
Low Parasitics
L
P
= 0.5 nH Typical
C
P
= 0.07 pF Typical
Surface Mount design
Broadband Performance Through
5 Ghz
Available on Tape & Reel for
Automated Pick & Place Assembly
Small, SOD 323 Size Footprint
RoHS Compliant
1
www.MICROSEMI.com
APPLICATIONS
Microsemi Lowell offers a variety of Varactor diodes in the GigaMite
package style. Their low internal series inductance makes these
products well suited for VCOs and VVFs through 5 gHz. Choose
GMV1981 for low voltage battery applications. GMV5007 offers
state of the art frequency linearity. GMV2114, GMV2134, and
GMV2154 offer smooth wide ratio 20V tuning. GMV1542 offers high
Q performance for lowest phase noise and loss.
APPLICATIONS/BENEFITS
Frequency Linear VCO’s
Low Phase Noise VCO’s
Wide Bandwidth VCO’s
Voltage variable Filters
Analog Phase Shifters
VCXO’s
Performance through 5 gHz
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Maximum Leakage Current
@80% of Rated V
B
Storage Temperature
Operating Temperature
Symbol
I
R
T
STG
T
OP
Value
100
-55 to +125
-55 to +125
Unit
nA
GigaMite™ Varactors
ºC
ºC
IMPORTANT:
Specifications are subject to change.
For the most current data vist
:
www.MICROSEMI.com
These devices are ESD sensitive and must be handled using ESD precautions
These devices are supplied with a
matte tin finish suitable for RoHS
compliant assembly.
1
Copyright
2007
Rev: 2009-02-09
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1

GMV2134-GM1 Related Products

GMV2134-GM1 GMV1000 GMV1981-GM1 GMV1542-GM1 GMV2114-GM1 GMV2100 GMV2154-GM1 GMV5000 GMV5007-GM1
Description C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE C BAND, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE C BAND, 22 V, SILICON, VARIABLE CAPACITANCE DIODE
Is it Rohs certified? conform to - conform to conform to conform to - conform to - conform to
Maker Microsemi - Microsemi Microsemi Microsemi - Microsemi - Microsemi
package instruction R-PDSO-N2 - R-PDSO-N2 R-PDSO-N2 R-PDSO-N2 - R-PDSO-N2 - R-PDSO-N2
Contacts 2 - 2 2 2 - 2 - 2
Reach Compliance Code compli - compli compli compli - compli - compli
ECCN code EAR99 - EAR99 EAR99 EAR99 - EAR99 - EAR99
Other features LOW INDUCTANCE, LOW NOISE - LOW INDUCTANCE, LOW NOISE LOW INDUCTANCE, LOW NOISE LOW INDUCTANCE, LOW NOISE - LOW INDUCTANCE, LOW NOISE - LOW INDUCTANCE, LOW NOISE
Minimum breakdown voltage 22 V - 12 V 30 V 22 V - 22 V - 22 V
Configuration SINGLE - SINGLE SINGLE SINGLE - SINGLE - SINGLE
Minimum diode capacitance ratio 3.7 - - 3.4 3.3 - 4.1 - 13
Nominal diode capacitance 4.9 pF - 0.25 pF 2.4 pF 2.1 pF - 14 pF - 2.5 pF
Diode component materials SILICON - SILICON SILICON SILICON - SILICON - SILICON
Diode type VARIABLE CAPACITANCE DIODE - VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE - VARIABLE CAPACITANCE DIODE - VARIABLE CAPACITANCE DIODE
frequency band C BAND - C BAND C BAND C BAND - C BAND - C BAND
JESD-30 code R-PDSO-N2 - R-PDSO-N2 R-PDSO-N2 R-PDSO-N2 - R-PDSO-N2 - R-PDSO-N2
Number of components 1 - 1 1 1 - 1 - 1
Number of terminals 2 - 2 2 2 - 2 - 2
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE - SMALL OUTLINE
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified - Not Qualified - Not Qualified
minimum quality factor 750 - 1200 3800 900 - 600 - 1200
Maximum repetitive peak reverse voltage 22 V - 12 V 30 V 22 V - 22 V - 22 V
surface mount YES - YES YES YES - YES - YES
Terminal form NO LEAD - NO LEAD NO LEAD NO LEAD - NO LEAD - NO LEAD
Terminal location DUAL - DUAL DUAL DUAL - DUAL - DUAL
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