GMV1000 datasheet, PDF - EEWORLD Datasheet

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GMV1000: DescriptionC BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE; Categorysemiconductor Discrete semiconductor; File Size122KB，3 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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GMV1000 Overview

C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE

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GMV1000 / GMV2100 / GMV5000

GigaMite

™

Surface Mount Varactor Diodes

RoHS Compliant

DESCRIPTION

This series of surface mount diodes are specifically design for high

volume surface mount applications. The GigaMite design is

optimized for improved electrical and thermal performance over

standard plastic package technology. Our patented dual orthogonal

lead frame provides both exceptionally low thermal impedance and

series inductance. Microsemi utilizes only the highest quality

dielectric materials resulting in low loss tangent and physical

stability even in harsh environments. The result is higher frequency

coverage and greater stability than comparable plastic packages.

This series of devices meets RoHS requirements per EU Directive

2002/95/EC.

KEY FEATURES



Low Parasitics

= 0.5 nH Typical

= 0.07 pF Typical



Surface Mount design



Broadband Performance Through

5 Ghz



Available on Tape & Reel for

Automated Pick & Place Assembly



Small, SOD 323 Size Footprint



RoHS Compliant

www.MICROSEMI.com

APPLICATIONS

Microsemi Lowell offers a variety of Varactor diodes in the GigaMite

package style. Their low internal series inductance makes these

products well suited for VCOs and VVFs through 5 gHz. Choose

GMV1981 for low voltage battery applications. GMV5007 offers

state of the art frequency linearity. GMV2114, GMV2134, and

GMV2154 offer smooth wide ratio 20V tuning. GMV1542 offers high

Q performance for lowest phase noise and loss.

APPLICATIONS/BENEFITS



Frequency Linear VCO’s

Low Phase Noise VCO’s

Wide Bandwidth VCO’s

Voltage variable Filters

Analog Phase Shifters

VCXO’s

Performance through 5 gHz

ABSOLUTE MAXIMUM RATINGS AT 25º C

(UNLESS OTHERWISE SPECIFIED)

Rating

Maximum Leakage Current

@80% of Rated V

Storage Temperature

Operating Temperature

Symbol

STG

Value

100

-55 to +125

Unit

GigaMite™ Varactors

ºC

IMPORTANT:

Specifications are subject to change.

For the most current data vist

www.MICROSEMI.com

These devices are ESD sensitive and must be handled using ESD precautions

These devices are supplied with a

matte tin finish suitable for RoHS

compliant assembly.



2007

Rev: 2009-02-09

Microsemi

Microwave Products

75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

Page 1

GMV1000 Related Products

	GMV1000	GMV1981-GM1	GMV1542-GM1	GMV2114-GM1	GMV2100	GMV2154-GM1	GMV5000	GMV2134-GM1	GMV5007-GM1
Description	C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE	C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE	C BAND, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE	C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE	C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE	C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	C BAND, 22 V, SILICON, VARIABLE CAPACITANCE DIODE
Is it Rohs certified?	-	conform to	conform to	conform to	-	conform to	-	conform to	conform to
Maker	-	Microsemi	Microsemi	Microsemi	-	Microsemi	-	Microsemi	Microsemi
package instruction	-	R-PDSO-N2	R-PDSO-N2	R-PDSO-N2	-	R-PDSO-N2	-	R-PDSO-N2	R-PDSO-N2
Contacts	-	2	2	2	-	2	-	2	2
Reach Compliance Code	-	compli	compli	compli	-	compli	-	compli	compli
ECCN code	-	EAR99	EAR99	EAR99	-	EAR99	-	EAR99	EAR99
Other features	-	LOW INDUCTANCE, LOW NOISE	LOW INDUCTANCE, LOW NOISE	LOW INDUCTANCE, LOW NOISE	-	LOW INDUCTANCE, LOW NOISE	-	LOW INDUCTANCE, LOW NOISE	LOW INDUCTANCE, LOW NOISE
Minimum breakdown voltage	-	12 V	30 V	22 V	-	22 V	-	22 V	22 V
Configuration	-	SINGLE	SINGLE	SINGLE	-	SINGLE	-	SINGLE	SINGLE
Nominal diode capacitance	-	0.25 pF	2.4 pF	2.1 pF	-	14 pF	-	4.9 pF	2.5 pF
Diode component materials	-	SILICON	SILICON	SILICON	-	SILICON	-	SILICON	SILICON
Diode type	-	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	-	VARIABLE CAPACITANCE DIODE	-	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE
frequency band	-	C BAND	C BAND	C BAND	-	C BAND	-	C BAND	C BAND
JESD-30 code	-	R-PDSO-N2	R-PDSO-N2	R-PDSO-N2	-	R-PDSO-N2	-	R-PDSO-N2	R-PDSO-N2
Number of components	-	1	1	1	-	1	-	1	1
Number of terminals	-	2	2	2	-	2	-	2	2
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE
Certification status	-	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	-	Not Qualified	Not Qualified
minimum quality factor	-	1200	3800	900	-	600	-	750	1200
Maximum repetitive peak reverse voltage	-	12 V	30 V	22 V	-	22 V	-	22 V	22 V
surface mount	-	YES	YES	YES	-	YES	-	YES	YES
Terminal form	-	NO LEAD	NO LEAD	NO LEAD	-	NO LEAD	-	NO LEAD	NO LEAD
Terminal location	-	DUAL	DUAL	DUAL	-	DUAL	-	DUAL	DUAL
Minimum diode capacitance ratio	-	-	3.4	3.3	-	4.1	-	3.7	13

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