IS62WV25616ALL-70B2 datasheet, PDF

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IS62WV25616ALL-70B2: DescriptionStandard SRAM, 256KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48; Categorystorage storage; File Size70KB，14 Pages; ManufacturerIntegrated Silicon Solution ( ISSI )

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IS62WV25616ALL-70B2 Overview

Standard SRAM, 256KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48

IS62WV25616ALL-70B2 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Integrated Silicon Solution ( ISSI )
Parts packaging code	BGA
package instruction	6 X 8 MM, MINI, BGA-48
Contacts	48
Reach Compliance Code	compliant
ECCN code	3A991.B.2.A
Maximum access time	70 ns
JESD-30 code	R-PBGA-B48
JESD-609 code	e0
length	8 mm
memory density	4194304 bit
Memory IC Type	STANDARD SRAM
memory width	16
Humidity sensitivity level	3
Number of functions	1
Number of terminals	48
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX16
Package body material	PLASTIC/EPOXY
encapsulated code	LFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum seat height	1.35 mm
Maximum supply voltage (Vsup)	2.2 V
Minimum supply voltage (Vsup)	1.65 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	0.75 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	6 mm

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IS62WV25616ALL

IS62WV25616BLL

256K x 16 LOW VOLTAGE,

ULTRA LOW POWER CMOS STATIC RAM

FEATURES

• High-speed access time: 55ns, 70ns

• CMOS low power operation

– 36 mW (typical) operating

– 9 µW (typical) CMOS standby

• TTL compatible interface levels

• Single power supply

– 1.65V--2.2V V

(62WV25616ALL)

– 2.5V--3.6V V

(62WV25616BLL)

• Fully static operation: no clock or refresh

required

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

• 2CS Option Available

ISSI

DESCRIPTION

PRELIMINARY INFORMATION

MARCH 2002

The

ISSI

IS62WV25616ALL / IS62WV25616BLL are high-

speed, 4M bit static RAMs organized as 128K words by 16

bits. It is fabricated using

ISSI

's high-performance CMOS

technology. This highly reliable process coupled with

innovative circuit design techniques, yields high-

performance and low power consumption devices.

When

CS1

is HIGH (deselected) or when CS2 is LOW

(deselected) or when

CS1

is LOW, CS2 is HIGH and both

and

are HIGH, the device assumes a standby mode

at which the power dissipation can be reduced down with

CMOS input levels.

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs. The active LOW Write Enable

(WE)

controls both writing and reading of the memory. A

data byte allows Upper Byte

(UB)

and Lower Byte (LB)

access.

The IS62WV25616ALL and IS62WV25616BLL are packged

in the JEDEC standard 48-pin mini BGA (6mm x 8mm) and

44-Pin TSOP (TYPE II). 48-pin mini BGA is available both

in 1CS and 2CS options.

FUNCTIONAL BLOCK DIAGRAM

A0-A17

DECODER

256K x 16

MEMORY ARRAY

VCC

GND

I/O0-I/O7

Lower Byte

I/O8-I/O15

Upper Byte

I/O

DATA

CIRCUIT

COLUMN I/O

CS2

CS1

CONTROL

CIRCUIT

This document contains PRELIMINARY INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the

Integrated Silicon Solution, Inc. — 1-800-379-4774

PRELIMINARY INFORMATION Rev. 00A

03/11/02

IS62WV25616ALL-70B2 Related Products

	IS62WV25616ALL-70B2	IS62WV25616ALL-70B	IS62WV25616BLL-55B2I	IS62WV25616BLL-70B	IS62WV25616BLL-70B2I	IS62WV25616BLL-70B2	IS62WV25616BLL-70BI	IS62WV25616ALL-70B2I	IS62WV25616BLL-55B	IS62WV25616BLL-55B2
Description	Standard SRAM, 256KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48	Standard SRAM, 256KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48	Standard SRAM, 256KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48	Standard SRAM, 256KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48	Standard SRAM, 256KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48	Standard SRAM, 256KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48	Standard SRAM, 256KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48	Standard SRAM, 256KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48	Standard SRAM, 256KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48	Standard SRAM, 256KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA
package instruction	6 X 8 MM, MINI, BGA-48	6 X 8 MM, MINI, BGA-48	6 X 8 MM, MINI, BGA-48	6 X 8 MM, MINI, BGA-48	6 X 8 MM, MINI, BGA-48	6 X 8 MM, MINI, BGA-48	6 X 8 MM, MINI, BGA-48	6 X 8 MM, MINI, BGA-48	6 X 8 MM, MINI, BGA-48	6 X 8 MM, MINI, BGA-48
Contacts	48	48	48	48	48	48	48	48	48	48
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	70 ns	70 ns	55 ns	70 ns	70 ns	70 ns	70 ns	70 ns	55 ns	55 ns
JESD-30 code	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0	e0
length	8 mm	8 mm	8 mm	8 mm	8 mm	8 mm	8 mm	8 mm	8 mm	8 mm
memory density	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	16	16	16	16	16	16	16	16	16	16
Humidity sensitivity level	3	3	3	3	3	3	3	3	3	3
Number of functions	1	1	1	1	1	1	1	1	1	1
Number of terminals	48	48	48	48	48	48	48	48	48	48
word count	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words
character code	256000	256000	256000	256000	256000	256000	256000	256000	256000	256000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	85 °C	70 °C	85 °C	70 °C	85 °C	85 °C	70 °C	70 °C
organize	256KX16	256KX16	256KX16	256KX16	256KX16	256KX16	256KX16	256KX16	256KX16	256KX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.35 mm	1.35 mm	1.35 mm	1.35 mm	1.35 mm	1.35 mm	1.35 mm	1.35 mm	1.35 mm	1.35 mm
Maximum supply voltage (Vsup)	2.2 V	2.2 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	2.2 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	1.65 V	1.65 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	1.65 V	2.5 V	2.5 V
Nominal supply voltage (Vsup)	1.8 V	1.8 V	2.8 V	2.8 V	2.8 V	2.8 V	2.8 V	1.8 V	2.8 V	2.8 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	0.75 mm	0.75 mm	0.75 mm	0.75 mm	0.75 mm	0.75 mm	0.75 mm	0.75 mm	0.75 mm	0.75 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	6 mm	6 mm	6 mm	6 mm	6 mm	6 mm	6 mm	6 mm	6 mm	6 mm
Base Number Matches	-	1	1	1	1	1	1	-	-	-

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